Metal-Semiconductor Transitions in Doped IV-VI Semiconductors

  • R. S. Allgaier
Part of the Institute for Amorphous Studies Series book series (IASS)

Abstract

The largest segment of postwar semiconductor research deals with the column-IV elements and their offspring, the III-V compounds. Just one column to the right, there is another closeknit family of nonmetals, the column-V semimetals As, Sb, and Bi, and the IV-VI semiconductor compounds. This review will focus on PbTe, SnTe, GeTe, and some of their alloys.1 Up until a few years ago, there would have been very little to say about the metal-semiconductor [M-SCI transition in these materials, since one of their distinctive properties has been the lack of extrinsic carrier freezeout. The discovery of deep-level defects and impurities in the IV-VI compounds has changed this situation completely, and has had a strong impact on many of their other basic properties. Currently, deep-level research generates about a third of all the papers published on the IV-VI family.

Keywords

Anisotropy Bismuth Dine Haas Selenide 

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Copyright information

© Plenum Press, New York 1985

Authors and Affiliations

  • R. S. Allgaier
    • 1
  1. 1.Theodore Associates, Inc.PotomacUSA

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