Abstract
Transient photoconductivity has been widely exploited as a tool for determining transport properties of electrons and holes in both insulators and semiconductors.1 The transient excitation allows the experimenter to sort out trapping processes with different rate constants, and from transit times across device structures to determine carrier mobilities. Experiments are usually conducted under conditions where the photocarriers produced by the transient excitation are too few in number to perturb the local electric fields imposed by known applied voltages.
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© 1985 Plenum Press , New York
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Hughes, R.C., Sokel, R. (1985). Transient Photoconductivity in Insulators at Very High Photocarrier Concentrations. In: Adler, D., Fritzsche, H., Ovshinsky, S.R. (eds) Physics of Disordered Materials. Institute for Amorphous Studies Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-2513-0_48
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DOI: https://doi.org/10.1007/978-1-4613-2513-0_48
Publisher Name: Springer, Boston, MA
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