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The Study of Disordered Semiconductors by Compensation

  • David Redfield
Part of the Institute for Amorphous Studies Series book series (IASS)

Abstract

Among the many techniques that have been applied to the challenging study of disordered semiconductors, compensation of dopants at significant density levels is one that has been used sporadically for more than 25 years1–7 and appears to have significant unrealized further potential. The goals of this paper are to summarize some of the benefits of compensated semiconductors in such studies, review selected past applications of the techniques, and point to some likely areas in which further use of compensation appears promising. This discussion encompasses disordered semiconductors that are either heavily doped crystals or amorphous materials.

Keywords

Electron Spin Resonance Auger Recombination Sation Ratio Dope Semiconductor Chemical Doping 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press , New York 1985

Authors and Affiliations

  • David Redfield
    • 1
  1. 1.RCA Laboratories PrincetonUSA

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