The Study of Disordered Semiconductors by Compensation
Among the many techniques that have been applied to the challenging study of disordered semiconductors, compensation of dopants at significant density levels is one that has been used sporadically for more than 25 years1–7 and appears to have significant unrealized further potential. The goals of this paper are to summarize some of the benefits of compensated semiconductors in such studies, review selected past applications of the techniques, and point to some likely areas in which further use of compensation appears promising. This discussion encompasses disordered semiconductors that are either heavily doped crystals or amorphous materials.
KeywordsPhosphorus Recombination Boron GaAs Stein
Unable to display preview. Download preview PDF.
- 5.B. M. Vul, An Analogue of Mott Transition in Compensated GaAs, in “Proc. 12th Intl. Conf. Phys. of Semicon.,” M. H. Pilkuhn, ed., Teubner, Stuttgart (1974).Google Scholar
- 8.D. Redfield, J. P. Wittke, and J. I. Pankove, Luminescent Properties of Energy Band Tail States in GaAs:Si, Phys. Rev. B, 6: 1830 (1970).Google Scholar
- 9.D. Redfield and J. P. Wittke, Energy Band Tails and Photoconductivity, in “Proc. III Photoconductivity Conf.,” E. Pell, ed., Pergamon, Oxford (1971) p. 29.Google Scholar
- 15.N.M. Amer and W.B. Jackson, Optical Properties of Defect States in a-Si:H, in “Semicon and Semimetals,” Vol. 21-Part B, J. Pankove, ed., Acad. Press, Oralndo (1984) p. 83.Google Scholar
- 16.R. A. Street, Luminescence in a-Si:H, in “Semicon. and Semimetals,” Vol. 21-Part B, J. Pankove, ed., Acad. Press, Orlando (1984) p. 197.Google Scholar
- 18.D. Redfield, Non-Reciprocity of Observations of Auger Recombination and Impact Ionization, Bull. Amer. Phys. Soc., 25: 362 (1980).Google Scholar