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The Study of Disordered Semiconductors by Compensation

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Physics of Disordered Materials

Part of the book series: Institute for Amorphous Studies Series ((IASS))

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Abstract

Among the many techniques that have been applied to the challenging study of disordered semiconductors, compensation of dopants at significant density levels is one that has been used sporadically for more than 25 years1–7 and appears to have significant unrealized further potential. The goals of this paper are to summarize some of the benefits of compensated semiconductors in such studies, review selected past applications of the techniques, and point to some likely areas in which further use of compensation appears promising. This discussion encompasses disordered semiconductors that are either heavily doped crystals or amorphous materials.

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Author information

Authors and Affiliations

  1. RCA Laboratories Princeton, NJ, 08540, USA

    David Redfield

Authors
  1. David Redfield
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Editor information

Editors and Affiliations

  1. Massachusetts Institute of Technology, Cambridge, Massachusetts, USA

    David Adler

  2. University of Chicago, Chicago, Ilinois, USA

    Hellmut Fritzsche

  3. Energy Conversion Devices, Inc, Troy, Michigan, USA

    Stanford R. Ovshinsky

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© 1985 Plenum Press , New York

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Redfield, D. (1985). The Study of Disordered Semiconductors by Compensation. In: Adler, D., Fritzsche, H., Ovshinsky, S.R. (eds) Physics of Disordered Materials. Institute for Amorphous Studies Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-2513-0_44

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  • DOI: https://doi.org/10.1007/978-1-4613-2513-0_44

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4612-9519-8

  • Online ISBN: 978-1-4613-2513-0

  • eBook Packages: Springer Book Archive

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