The Study of Disordered Semiconductors by Compensation
Among the many techniques that have been applied to the challenging study of disordered semiconductors, compensation of dopants at significant density levels is one that has been used sporadically for more than 25 years1–7 and appears to have significant unrealized further potential. The goals of this paper are to summarize some of the benefits of compensated semiconductors in such studies, review selected past applications of the techniques, and point to some likely areas in which further use of compensation appears promising. This discussion encompasses disordered semiconductors that are either heavily doped crystals or amorphous materials.
KeywordsElectron Spin Resonance Auger Recombination Sation Ratio Dope Semiconductor Chemical Doping
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