The Study of Disordered Semiconductors by Compensation

  • David Redfield
Part of the Institute for Amorphous Studies Series book series (IASS)


Among the many techniques that have been applied to the challenging study of disordered semiconductors, compensation of dopants at significant density levels is one that has been used sporadically for more than 25 years1–7 and appears to have significant unrealized further potential. The goals of this paper are to summarize some of the benefits of compensated semiconductors in such studies, review selected past applications of the techniques, and point to some likely areas in which further use of compensation appears promising. This discussion encompasses disordered semiconductors that are either heavily doped crystals or amorphous materials.


Electron Spin Resonance Auger Recombination Sation Ratio Dope Semiconductor Chemical Doping 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    F. Stern and J.R. Dixon, Narrowing the Energy Gap in Semiconductors by Compensation, J. Appl. Phys., 30:268 (1959)ADSCrossRefGoogle Scholar
  2. 2.
    A.B. Fowler, W.E. Howard, and G.E. Brock, Optical Properties of Heavily Doped Compensated Ge, Phys. Rev., 128:1664 (1962)ADSCrossRefGoogle Scholar
  3. 3.
    D. Redfield and M.A. Afromowitz, The Direct Absorption Edge in Covalent Solids, Appl. Phys. Lett., 11:138 (1967)ADSCrossRefGoogle Scholar
  4. 4.
    B.I. Shklovskii and A.L. Efros, Transition from Metallic to Activation Conductivity in Compensated Semiconductors, Sov. Phys. JETP, 34:435 (1972)ADSGoogle Scholar
  5. 5.
    B. M. Vul, An Analogue of Mott Transition in Compensated GaAs, in “Proc. 12th Intl. Conf. Phys. of Semicon.,” M. H. Pilkuhn, ed., Teubner, Stuttgart (1974).Google Scholar
  6. 6.
    W. Sasaki and C. Yamanuchi, Quantitative Study of the Effect of Compensation on Impurity Conduction in Heavily Doped n-Type Ge, J. Non-Cryst. Solids, 4:183 (1970)ADSCrossRefGoogle Scholar
  7. 7.
    D. Redfield, Transport Properties of Electrons in Energy Band Tails, Adv. in Phys., 24:463 (1975)ADSCrossRefGoogle Scholar
  8. 8.
    D. Redfield, J. P. Wittke, and J. I. Pankove, Luminescent Properties of Energy Band Tail States in GaAs:Si, Phys. Rev. B, 6: 1830 (1970).Google Scholar
  9. 9.
    D. Redfield and J. P. Wittke, Energy Band Tails and Photoconductivity, in “Proc. III Photoconductivity Conf.,” E. Pell, ed., Pergamon, Oxford (1971) p. 29.Google Scholar
  10. 10.
    T.N. Morgan, Brodening of Impurity Bands in Heavily Doped Semiconductors, Phys. Rev., 139:A343 (1965)ADSCrossRefGoogle Scholar
  11. 11.
    G.D. Mahan, Energy Gap in Silicon and Germanium: Impurity Dependence, J. Appl. Phys., 51:2634 (1980)ADSCrossRefGoogle Scholar
  12. 12.
    J. Serre and A. Ghazali, From Band Tailing to Impurity-Band Formation and Discussion of Laocalization in Doped Semiconductors: A Multiple-Scattering Approach, Phys. Rev. B, 28:4704 (1983)ADSCrossRefGoogle Scholar
  13. 13.
    H. Yonezu, I. Sakuma, T. Kamejima, M. Ueno, K. Iwamoto, I. Hino, and I. Hayashi, High Optical Power Density Emission from a Window-Stripe AIGaAs Double Heterojunction Laser, Appl. Phys. Lett., 34:637 (1979)ADSCrossRefGoogle Scholar
  14. 14.
    J.R. Lowney and W.R. Thurber, Evidence of bandgap Narrowing in the Space-Charge Layer of Heavily Doped Si Diodes, Electron. Lett., 20:142 (1984).ADSCrossRefGoogle Scholar
  15. 15.
    N.M. Amer and W.B. Jackson, Optical Properties of Defect States in a-Si:H, in “Semicon and Semimetals,” Vol. 21-Part B, J. Pankove, ed., Acad. Press, Oralndo (1984) p. 83.Google Scholar
  16. 16.
    R. A. Street, Luminescence in a-Si:H, in “Semicon. and Semimetals,” Vol. 21-Part B, J. Pankove, ed., Acad. Press, Orlando (1984) p. 197.Google Scholar
  17. 17.
    H.J. Stein, Electrical Studies of Low-Temperature Neutron- and Electron-Irradiated Epitaxial n-Type GaAs, J. Appl. Phys., 40:5300 (1969).ADSCrossRefGoogle Scholar
  18. 18.
    D. Redfield, Non-Reciprocity of Observations of Auger Recombination and Impact Ionization, Bull. Amer. Phys. Soc., 25: 362 (1980).Google Scholar

Copyright information

© Plenum Press , New York 1985

Authors and Affiliations

  • David Redfield
    • 1
  1. 1.RCA Laboratories PrincetonUSA

Personalised recommendations