Abstract
A new frequency dependent screening length analogous to the Debye length in crystalline semiconductors is proposed for amorphous semiconductors with exponential distributions of localized band-tail states. This screening length is derived from an analytic solution of the multiple trapping equations for the admittance of an amorphous MIS junction. It predicts a power law frequency dependence for the capacitance, as is frequently observed in amorphous semiconductor junctions.
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© 1985 Plenum Press , New York
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Tiedje, T. (1985). Multiple Trapping Models for Dispersive Admittance of Amorphous MIS Structures. In: Adler, D., Fritzsche, H., Ovshinsky, S.R. (eds) Physics of Disordered Materials. Institute for Amorphous Studies Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-2513-0_37
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DOI: https://doi.org/10.1007/978-1-4613-2513-0_37
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4612-9519-8
Online ISBN: 978-1-4613-2513-0
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