Magnetoresistance in Amorphous Semiconductors
The first measurement of the magnetoresistance (MR) for amorphous semiconductors was made by Mell and Stuke (1970) and Mell (1974) for amorphous Ge, Si, InSb and GeTe in the variable range hopping (VRH) conduction regime. The typical field dependence of MR for their evaporated a-Si sample is as follows: Below about 1kg the MR increases approximately proportional to the absolute value of the field, then goes through a maximum and finally decreases down to negative values at high fields. The positive contribution to MR increases with decreasing temperature and the absolute value of the negative contribution to MR also increases with decreasing temperature which is clearer in the case of a- Ge. Note that qualitative features of these field- and temperature- dependences are similar to those observed in the Anderson localized regime (Kobayashi and Muto,1979; Onuki et al., 1980).
KeywordsAnisotropy Selenium Shrinkage Germanium GeTe
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- Kamimura, H., 1985, Electron-electron interactions in the Anderson- localized regime, Pollak, M., and Efros, A.L., eds., in press N. Holland Publishing Co.Google Scholar
- Kamimura, H., Takemori, T., and Kurobe, A., 1982, Interplay of disorder and Coulomb interactions in Anderson-localized states, in “Anderson Localization,” Springer Series in Solid State Sciences 39, Nagaoka, Y., and Fukuyama, H., eds., Springer Berlin p156.Google Scholar
- Kamimura, H., Kurobe, A., and Takemori, T., 1983, Magnetoresistance in Anderson-localized systems, in “Proc. 16th Intern. Conf. on Physics of Semiconductors,Montpellier 1982,” Averous, M., ed., North-Holland, Amsterdam, Physica, 117 and 118B+C:652.Google Scholar
- Mell, H., 1974, Transport properties of tetrahedrally bonded, Proc. 5th Int. Conf. Amorphous and Liquid Semiconductors, p203.Google Scholar
- Mott, N.F. and Davis, E.A., 1979, Theory of electrons in a non-crystalline medium (Chapter 2), in: “Electronic Processes in Non-Crystalline Materials”, second edition, Clarendon press, Oxford.Google Scholar
- Natori, A., and Kamimura, H., 1980, Theory of a D band, Prog. Theoret. Phys. Suppl., 69: 353.Google Scholar
- Onuki, Y., Inada, R., and Tanuma, S., 1980, Effect of impurities of selenium and iron on the Anderson localization of lT-TaSU2D, Physica, 99b: 177.Google Scholar
- Pollak, M., 1978, Percolation and hopping transport, In “The Metal Non- Metal Transition in Disordered Systems,” Friedman, L. R., and Tunstall, D. P., eds., SUSSP Publications, Edinburgh p95.Google Scholar
- Spear, W. E., 1974, Localized states in amorphous semiconductors, in “Proc. 5th Int. Conf. Amorphous and Liquid Semiconductors, Garmisch, 1973,” Stuke, J., and Brenig, W., eds., Taylor and Francis, London, pl.Google Scholar