Abstract
A large model of amorphous germanium (2052 atoms) was built and investigated. The electron charge distribution on its atoms was calculated. The atomic scale structures of amorphous arsenic and As2Se3 were modelled with emphasis on medium-range order. The structural relaxation induced by annealing in amorphous Pd4Si was simulated in the frame of a DRPSU (dense random packing of structural units) model. The reversible photostructural phenomena (photodarkening and bleaching) in As3Se2 were modelled.
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Popescu, M.A. (1985). Computer-Assisted Modelling of Amorphous Solids. In: Adler, D., Fritzsche, H., Ovshinsky, S.R. (eds) Physics of Disordered Materials. Institute for Amorphous Studies Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-2513-0_11
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DOI: https://doi.org/10.1007/978-1-4613-2513-0_11
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