Abstract
Results are presented of a detailed microstructural study of the various interfaces occurring in reaction-bonded silicon carbides. All the interfaces are found to be remarkably clean due to the nature of the reaction-bonding process; although impurity-filled inclusions are found at both epitaxial interfaces and grain boundaries and can affect the high temperature strength. Grain boundaries contain a thin (~10Å) amorphous silicon carbide film and are strong, as are the epitaxial interfaces. By comparison, the SiC:Si interfaces appear partially epitaxial and possibly contain an amorphous silicon carbide film, but are weak in nature.
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© 1986 Plenum Press, New York
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Ness, J.N., Page, T.F. (1986). The Structure and Properties of Interfaces in Reaction-Bonded Silicon Carbides. In: Tressler, R.E., Messing, G.L., Pantano, C.G., Newnham, R.E. (eds) Tailoring Multiphase and Composite Ceramics. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-2233-7_26
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DOI: https://doi.org/10.1007/978-1-4613-2233-7_26
Publisher Name: Springer, Boston, MA
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