Abstract
The application of a dry development process to Langmuir-Blodgett films used as electron-beam resist materials is demonstrated. This dry process involves the use of high vacuum in conjunction with heat. Good results with regard to resolution and pattern definition were obtained with vinyl tetracosanoate as the resist material. The importance of tailoring the physical properties of the monolayer material to the electron-beam exposure conditions is emphasized: A deposited film of vinyl octadecanoate melts under the conditions present in the exposure chamber, with the result that the pattern lines coalesce, leading to a poorly resolved pattern, whereas the corresponding deposited film of vinyl tetracosanoate is stable under the exposure conditions, and thus gives a well-resolved pattern.
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© 1987 Plenum Press, New York
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Kellner, B.M.J., Czornyj, G. (1987). Dry Development of Monolayer-Based Electron-Beam Resists. In: Mittal, K.L. (eds) Surface and Colloid Science in Computer Technology. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1905-4_22
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DOI: https://doi.org/10.1007/978-1-4613-1905-4_22
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4612-9060-5
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