Abstract
This paper is a survey of the main results obtained to date with very thin resists in electron beam microlithography. After an analysis of the influence of resist thickness and accelerating voltage on image resolution, results obtained with different kinds of very thin resists are presented : L.B. films of ?-tricosenoic acid exhibit both high contrast and high sensitivity, and allow a spatial resolution of 500 Å after development and 1000 Å after etching ; adsorbed monolayers show the very limits of electron beam lithography, and new L.B. resists have appeared very recently. Finally the position of these resists in electron beam microlithography is presented together with the associated techniques (3 layer technique, new voltage electron guns) required for electron beam lithography to work below 3000 Å.
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© 1987 Plenum Press, New York
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Barraud, A. (1987). Microlithography with Monolayers and Langmuir-Blodgett Films. In: Mittal, K.L. (eds) Surface and Colloid Science in Computer Technology. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1905-4_21
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DOI: https://doi.org/10.1007/978-1-4613-1905-4_21
Publisher Name: Springer, Boston, MA
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