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Modification of Silver/Silicon Interfaces During MeV-Ion Bombardment: The Role of an Interfacial Oxide Layer

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Surface and Colloid Science in Computer Technology

Abstract

We have studied the production of disordered Si at Ag/Si interfaces during 5.9 MeV 9Be ion irradiation. The technique of transmission ion channeling was used, which is sensitive to less than one monolayer of nonregistered Si. MeV-ion irradiation of many thin film/substrate interfaces is known to significantly improve the adhesion of the film to the substrate. If atomic mixing or formation of new bonds is responsible for improved adhesion, then disordered Si should be produced. The results indicate that the ion bombardment produces recoiling Ag atoms that cause damage in the Si substrate. An interfacial oxide layer can act as a barrier to the recoil damage. For a sample with no Ag layer and a native oxide on Si, nonregistered Si was produced by electronic excitation during ion bombardment.

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Author information

Authors and Affiliations

  1. Department of Physics, University of Pennsylvania, Philadelphia, PA, 19104, USA

    L. E. Seiberling

  2. Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, PA, 19104, USA

    R. L. Headrick

Authors
  1. L. E. Seiberling
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  2. R. L. Headrick
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Editor information

Editors and Affiliations

  1. IBM Corporate Technical Institutes, 500 Columbus Ave., Thornwood, NY, 10594, USA

    Kashmiri Lal Mittal M.Sc. (First Class First) Ph.D. (senior Institute staff member, Fellow of the American Institute of Chemists and Indian Chemical Society) (senior Institute staff member, Fellow of the American Institute of Chemists and Indian Chemical Society)

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© 1987 Plenum Press, New York

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Seiberling, L.E., Headrick, R.L. (1987). Modification of Silver/Silicon Interfaces During MeV-Ion Bombardment: The Role of an Interfacial Oxide Layer. In: Mittal, K.L. (eds) Surface and Colloid Science in Computer Technology. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1905-4_14

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  • DOI: https://doi.org/10.1007/978-1-4613-1905-4_14

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4612-9060-5

  • Online ISBN: 978-1-4613-1905-4

  • eBook Packages: Springer Book Archive

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