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High Pressure Techniques for Research in Semiconductors: A Review

  • Chapter
Optical Properties of Narrow-Gap Low-Dimensional Structures

Part of the book series: NATO ASI Series ((NSSB,volume 152))

Abstract

High pressure studies of semiconductors have given valuable insights to their room-pressure properties and have also been used to generate new phases. It is important to note that hydrostatic pressure acts as a perturbation on the electronic properties without a change of symmetry within a single, homogeneous phase. Accordingly, the changes in optical or electronic properties can be interepreted in a straightforward manner, at least in principle. The effects of uniaxial or shear stresses will not be dealt with in this review. However, shear stresses are generated in epi-layers or thin films of different compressibility than the substrate, even if compressed by a hydrostatic fluid.

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Author information

Authors and Affiliations

  1. Department of Physics, Colorado State University, Fort Collins, CO, 80523, USA

    Ian L. Spain

Authors
  1. Ian L. Spain
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Editor information

Editors and Affiliations

  1. University of St. Andrews, St. Andrews, Scotland

    C. M. Sotomayor Torres

  2. CNRS-INSA, Toulouse, France

    J. C. Portal

  3. CNRS-SNCI, Grenoble, France

    J. C. Portal

  4. Max-Planck-Institut für Festkörperforschung, Grenoble, France

    J. C. Maan

  5. Imperial College of Science and Technology, London, England

    R. A. Stradling

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© 1987 Plenum Press, New York

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Spain, I.L. (1987). High Pressure Techniques for Research in Semiconductors: A Review. In: Sotomayor Torres, C.M., Portal, J.C., Maan, J.C., Stradling, R.A. (eds) Optical Properties of Narrow-Gap Low-Dimensional Structures. NATO ASI Series, vol 152. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1879-8_24

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  • DOI: https://doi.org/10.1007/978-1-4613-1879-8_24

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4612-9047-6

  • Online ISBN: 978-1-4613-1879-8

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