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Energy Relaxation Phenomena in GaAs/GaAlAs Structures

  • Erich Gornik
Part of the NATO ASI Series book series (NSSB, volume 152)

Abstract

The energy relaxation of 2D electrons in GaAs/GaAlAs structures has been investigated by analysing the electric field dependence of Shubnikov-de Haas oscillations, the far infrared emission and photoluminescence spectra. A quite general behavior of the electron heating ∆T = Te − TL as a function of the input power per electron Pe is found: \( T\alpha \sqrt {{{P_{e}}}} . \). The corresponding energy relaxation times in the range of nsec are independent of the electron temperature up to 30 K and inversly proportional to the electron density. At higher electron temperatures the energy relaxation is governed by optical phonon emission. However, the onset depends on electron concentration and is different for heterostructures and quantum wells. From intensity dependent cyclotron resonance transmission experiments Landau level lifetimes between 0.2 ns and 1 ns depending on the electron density are found in agreement with data from time-resolved photoluminescence.

Keywords

Electron Temperature Optical Phonon Landau Level Energy Relaxation Electron Heating 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1987

Authors and Affiliations

  • Erich Gornik
    • 1
  1. 1.Institut für ExperimentalphysikUniv. InnsbruckInnsbruckAustria

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