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The Spectroscopic Investigation of Negatively Charged Donor Ions (D¯ States)

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Book cover Disordered Semiconductors

Part of the book series: Institute for Amorphous Studies Series ((IASS))

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Abstract

The first suggestion that a similar state to the negatively-charged hydrogen (H¯) ion might exist in a semiconductor involving an additional electron being bound to form a negatively-charged donor (D¯) was made by Ansel’m.1 Such bound states were incorporated into a theory of neutral impurity scattering by Sclar.2 The binding energy of a D state in a semiconductor with a spherical, parabolic and non-degenerate band at zero magnetic field was given by Lampert3 as 0,0555 Ry* (where Ry* is the effective Rydberg in the semiconductor). At the same time Fritzsche4 showed the presence of three different types of thermal activation of the electrical conductivity of germanium at low temperatures. The second of these characterised by an activation energy (εz) was only observed with low compensation samples and was attributed to the transfer of an electron from the ground state of the neutral donors to mobile states just below the conduction band. Fritzsche also proposed that these states formed a band made up out of D¯ states. Mott, Hubbard and Anderson5,6 discussed the significance of this band of states in determining the metal-insulator transition in charged semiconductors.

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Author information

Authors and Affiliations

  1. Blackett Laboratory, Imperial College, SW7 2BZ, London, UK

    R. A. Stradling

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  1. R. A. Stradling
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Editor information

Editors and Affiliations

  1. Massachusetts Institute of Technology, Cambridge, Massachusetts, USA

    Marc A. Kastner

  2. AT&T Bell Laboratories, Murray Hill, New Jersey, USA

    Gordon A. Thomas

  3. Energy Conversion Devices, Inc., Troy, Michigan, USA

    Stanford R. Ovshinsky

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© 1987 Plenum Press, New York

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Stradling, R.A. (1987). The Spectroscopic Investigation of Negatively Charged Donor Ions (D¯ States). In: Kastner, M.A., Thomas, G.A., Ovshinsky, S.R. (eds) Disordered Semiconductors. Institute for Amorphous Studies Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1841-5_8

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  • DOI: https://doi.org/10.1007/978-1-4613-1841-5_8

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4612-9028-5

  • Online ISBN: 978-1-4613-1841-5

  • eBook Packages: Springer Book Archive

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