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Hydrogen Motion and the Staebler-Wronski Effect in Amorphous Silicon

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Disordered Semiconductors

Part of the book series: Institute for Amorphous Studies Series ((IASS))

Abstract

In 1977 Staebler and Wronski (1) discovered that prolonged illumination could induce reversible changes in the photoconductivity and dark conductivity of hydrogenated amorphous silicon (a-Si: H). Subsequently, similar reversible changes have been observed in the photoluminescence (2), electron spin density (3), photovoltaic parameters (4), and density of gap states (5) in a-Si: H.

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Author information

Authors and Affiliations

  1. Solarex Thin Film Division, 826 Newtown-Yardley Road, 18940, Newtown, PA, USA

    D. E. Carlson

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  1. D. E. Carlson
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Editors and Affiliations

  1. Massachusetts Institute of Technology, Cambridge, Massachusetts, USA

    Marc A. Kastner

  2. AT&T Bell Laboratories, Murray Hill, New Jersey, USA

    Gordon A. Thomas

  3. Energy Conversion Devices, Inc., Troy, Michigan, USA

    Stanford R. Ovshinsky

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© 1987 Plenum Press, New York

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Carlson, D.E. (1987). Hydrogen Motion and the Staebler-Wronski Effect in Amorphous Silicon. In: Kastner, M.A., Thomas, G.A., Ovshinsky, S.R. (eds) Disordered Semiconductors. Institute for Amorphous Studies Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1841-5_64

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  • DOI: https://doi.org/10.1007/978-1-4613-1841-5_64

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4612-9028-5

  • Online ISBN: 978-1-4613-1841-5

  • eBook Packages: Springer Book Archive

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