Advertisement

Hydrogen Motion and the Staebler-Wronski Effect in Amorphous Silicon

  • D. E. Carlson
Part of the Institute for Amorphous Studies Series book series (IASS)

Abstract

In 1977 Staebler and Wronski (1) discovered that prolonged illumination could induce reversible changes in the photoconductivity and dark conductivity of hydrogenated amorphous silicon (a-Si: H). Subsequently, similar reversible changes have been observed in the photoluminescence (2), electron spin density (3), photovoltaic parameters (4), and density of gap states (5) in a-Si: H.

Keywords

Amorphous Silicon Hydrogen Molecule Pair Bond Electron Spin Density Prolonged Illumination 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    D. L. Staebler and C. R. Wronski, Appl. Phys. Lett. 31: 292 (1977).ADSCrossRefGoogle Scholar
  2. 2.
    K. Morigaki, I. Hirabayashi, N. Nakayama, S. Nitta and K. Shimakawa, Solid State Commun. 33: 851 (1980).ADSCrossRefGoogle Scholar
  3. 3.
    I. Hirabayashi, K. Morigaki, and S. Nitta, Jap. J. Appl. Phys. 19: L357 (1980).ADSCrossRefGoogle Scholar
  4. 4.
    D. L. Staebler, R.S. Crandall and R. Williams, Appl. Phys. Lett. 39: 733 (1981).ADSCrossRefGoogle Scholar
  5. 5.
    M. H. Tanielian, N. B. Goodman and H. Fritzsche, J. de Phys. 42: C4–375 (1981).Google Scholar
  6. 6.
    W. Kruhler, H. Pfeiderer, R. Plattner and W. Stetter, AIP Conf. Proc. No. 120: 311 (1984).ADSCrossRefGoogle Scholar
  7. 7.
    S. Guha, J. Yang, W. Czubatyj, S. J. Hudgens and M. Hack, Appl. Phys. Lett. 42: 588 (1983).ADSCrossRefGoogle Scholar
  8. 8.
    H. Dersch, J. Stuke and J. Beichler, Appl. Phys. Lett. 38: 456 (1981).ADSCrossRefGoogle Scholar
  9. 9.
    D. Adler, M. E. Eberhart, K. H. Johnson and S. A. Zygmunt, J. Non-Cryst. Solids 66: 273 (1984).ADSCrossRefGoogle Scholar
  10. 10.
    J. C. Knights, G. Lucovsky and R. Nemanich, J. Non-Cryst. Solids 32: 393 (1979).ADSCrossRefGoogle Scholar
  11. 11.
    J. A. Reimer, R. W. Vaughnan and J. C. Knights, Phys. Rev. B 24: 3360 (1981).ADSCrossRefGoogle Scholar
  12. 12.
    Y. Katayama, T. Shimada, K. Usami and E. Maruyama, J. de Physique 42: C4–787 (1981).Google Scholar
  13. 13.
    J. E. Graebner, L. C. Allen and B. Golding, Phys. Rev. B 31: 094 (1985).CrossRefGoogle Scholar
  14. 14.
    Y. J. Chabal and C. K. N. Patel, Phys. Rev. Lett. 53: 210 (1984).ADSCrossRefGoogle Scholar
  15. 15.
    J. Baum, K. K. Gleason, A. Pines, A. N. Garroway and J. A. Reimer, Phys. Rev. Lett. 56: 1377 (1986).ADSCrossRefGoogle Scholar
  16. 16.
    U. J. He, M. Hasegawa, R. Lee, S. Berko, D. Adler and A.-L. Jung, Phys. Rev. B 33: 5924 (1986).ADSCrossRefGoogle Scholar
  17. 17.
    D. E. Carlson and C. W. Magee, Appl. Phys. Lett. 33: 81 (1978).ADSCrossRefGoogle Scholar
  18. 18.
    e.g., the covalent bond in H2 has a dissociation energy of 4.48eV while that for H2 + is 2.65eVGoogle Scholar
  19. 18a.
    A. G. Gaydon, “Dissociation Energies and Spectra of Diatomic Molecules”, John Wiley & Sons, NY 1947.Google Scholar
  20. 19.
    D. E. Carlson, A. R. Moore, D. J. Szostak, B. Goldstein, R. W. Smith, P. J. Zanzucchi and W. R. Frenchu, Solar Cells 9: 19 (1983).ADSCrossRefGoogle Scholar
  21. 20.
    P. Zhang, C. Tan, Q. Zhu and S. Peng, 10th International Conf. on Amorphous & Liquid Semicond. (Japan) 1983.Google Scholar
  22. 21.
    C. S. Hong, K. S. Teng, K. C. Hsu, W. J. Jou, J. Y. Ueng, S. C. Lee and H. L. Hwang, Conf. Record of 18th IEEE Photovoltaic Specialists Conf., IEEE, NY (1985) p. 909.Google Scholar
  23. 22.
    H. Fritzsche, J. Kakalios and D. Bernstein, AIP Conf. Proc, No. 120: 229 (1984).ADSCrossRefGoogle Scholar
  24. 23.
    A. Chenevas-Paule, R. Bellissent, M. Roth and J. Pankove, 11th International Conf. on Amorphous & Liquid Semicond., Rome, Sept. 1985.Google Scholar
  25. 24.
    A. J. Tavendale, A. A. Williams and S. J. Pearton, Appl. Phys. Lett. 48: 590 (1986).ADSCrossRefGoogle Scholar
  26. 25.
    J. I. Pankove, C. W. Magee and R. O. Wance, Appl. Phys. Lett. 47: 748 (1985).ADSCrossRefGoogle Scholar
  27. 26.
    G. G. DeLeo and W. B. Fowler, Phys. Rev. B 31: 6861 (1985).ADSCrossRefGoogle Scholar
  28. 27.
    T. Sakurai and H. D. Hagstrum, Phys. Rev. B 14: 1593 (1976).ADSCrossRefGoogle Scholar
  29. 28.
    V. A. Singh, C. Weigel, J. W. Corbett and L. M. Roth, Phys. Stat. Sol. (b) 81: 637 (1977).ADSCrossRefGoogle Scholar
  30. 29.
    A. Gallagher and J. Scott, SERI Quarterly Progress Report for the period 7/15/85 to 10/14/85. Contract No. DB-4–04-04078–1.Google Scholar
  31. 30.
    R. Watts, “Point Defects in Crystals,” John Wiley & Sons, NY (1977).Google Scholar
  32. 31.
    H. J. Stein, in ’’Radiation Effects in Semiconductors”, J. Corbett and G. Watkins, Eds., Gordon & Breach Science Publ. London, C1971.Google Scholar
  33. 32.
    P. C. DAntonio and J. H. Konnert, in: “Tetrahedrally Bonded Amorphous Semiconductors”, R. A. Street, D. K. Biegelsen and J. C. Knights, Eds., AIP, NY (1981).Google Scholar
  34. 33.
    Y. Minamino, Y. Nitta, K. Fujisawa, H. Kubo, C. Iwasaki, T. Minato, K. Tomita and K. Ishibitsu, Conf. Record of 17th IEEE Photovoltaic Specialists Conf., IEEE, NY (1984) p. 229.Google Scholar
  35. 34.
    P. Irsigler, D. Wagner and D. J. Dunstan, J. Non-Cryst. Solids 69: 207 (1985).ADSCrossRefGoogle Scholar
  36. 35.
    J. Jang and C. Lee, AIP Conf. Proc. No. 120: 280 (1984).ADSCrossRefGoogle Scholar
  37. 36.
    I. Hirabayashi, K. Morigaka and M. Yoshida, Solar Energy Mat. 8: 123 (1982).ADSCrossRefGoogle Scholar
  38. 37.
    D. E. Carlson, unpublished data.Google Scholar
  39. 38.
    Chronar Corp. SERI Annual Progress Report for the period 10/1/84 to 9/30/85. Contract No. ZB-3–03056-1.Google Scholar
  40. 39.
    T. Shimizu, M. Kumeda, A. Morimoto, H. Yokomichi and N. Ishii, 11th International Conf. on Amorphous & Liquid Semicond., Rome (Sept. 1985).Google Scholar
  41. 40.
    H. Matsumura, T. Uesugi and H. Ihara, 16th International Conf. on Solid State Devices & Mat., Kobe, Japan (1984).Google Scholar
  42. 41.
    A. Morimoto, H. Yokomichi, T. Atoji, M. Kumeda, I. Watanabe and T. Shimizu, AIP Conf. Proc. No. 120: 221 (1984).ADSCrossRefGoogle Scholar
  43. 42.
    M. Ohsawa, T. Hama, T. Akasaka, T. Ichimura, H. Sakai, S. Ishida and Y. Uchida, Jap. J. Appl. Phys. 24: L838 (1985).ADSCrossRefGoogle Scholar

Copyright information

© Plenum Press, New York 1987

Authors and Affiliations

  • D. E. Carlson
    • 1
  1. 1.Solarex Thin Film DivisionNewtownUSA

Personalised recommendations