Resonant Tunneling Through Quantized States in a-Si:H
Ultra-thin multilayer structures consisting of amorphous silicon (a-Si:H) and silicon-based materials such as amorphous silicon nitride (a-Si1−xN x:H), silicon carbide (a-Si1−xCx:H), or silicon germanium (a-Si1−xGex:H) have been extensively studied. The layer thickness can be controlled on an atomic scale and hence the optical and electrical properties have been interpreted by assuming the quantized states in the 1−7, conduction and valence bands of the potential well layers, as in the case of crystalline semiconductor superlattices. However, there has been a current question whether or not the quantum size effect is really existing in ultra-thin amorphous semiconductor multilayers. In this paper, we report on the resonant tunneling phenomena through a-Si3N4:H/a-Si:H/a-Si3N 4:H double barrier structures. This is a direct evidence of the quantization effect in an amorphous silicon well layer sandwiched with stoichiometric silicon nitride barriers.
KeywordsAmorphous Silicon Resonant Tunneling Electron Effective Mass Double Barrier Silicon Germanium
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