Abstract
The physics of hydrogenated amorphous silicon (a-Si:H) has been studied extensively for a number of years. Our knowledge of the fundamental growth mechanisms continues to expand, however, through more detailed measurements of sample microstructure and its connection with plasma processing. In situ ellipsometry is one such measurement which we believe holds considerable promise in this regard. [1–3] The present paper first provides a review of the current status of the interpretation of ellipsometry measurements of thin film semiconductors. This background material is presented so that the reader will easily recognize the novel capabilities of in situ ellipsometry for the study of the microstructuraI evolution of a-Si:H. The second part of the paper will cover applications of the in situ technique to investigations of (1) the nucleation and interface properties of a-Si:H deposited under different conditions and (2) the effects of N2 plasma exposure on the a-Si:H surface.
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© 1987 Plenum Press, New York
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Collins, R.W., Cavese, J.M., Clark, A.H. (1987). Application of in Situ Ellipsometry to the Growth of Hydrogenated Amorphous Silicon. In: Kastner, M.A., Thomas, G.A., Ovshinsky, S.R. (eds) Disordered Semiconductors. Institute for Amorphous Studies Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1841-5_49
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DOI: https://doi.org/10.1007/978-1-4613-1841-5_49
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