Abstract
A general problem for the understanding of the properties of localized defect states in the gap of semiconductors is the question of electron correlation. Usually, the influence of correlation effects on the energy-levels of a localized gap state is expressed in terms of the effective correlation energy, Ueff, which describes the difference in total electronic energy due to occupation of the same defect state by one or two electrons:
where D denotes a localized defect and the upper index represents the electron occupation number, n=0, 1, or 2.
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References
L.I. Schiff, “Quantum Mechanics”, McGraw-Hill, New York (1968)
Y. Tonozawa, Phonon structures in the spectra of solids, J. Luminescence 1,2: 732 (1970)
D. Adler and E.J. Yoffa, Electronic structure of amorphous semiconductors, Phys. Rev. Lett. 36: 1197 (1976)
P.W. Anderson, Model for the electronic structure of amorphous semiconductores, Phys. Rev. Lett. 34: 953 (1975)
R.A. Street and N.F. Mott, States in the gap in glassy semiconductors, Phys. Rev. Lett. 35: 1293 (1975)
M. Kastner, D. Adler, and H. Fritzsche, Valence-alternation model for localized gap states in lone-pair semiconductors, Phys. Rev. Lett. 37: 1504 (1976)
D. Vanderbilt and J.D. Joannopoulos, Bonding coordination defect in g-Se: a “positive-U” system, Phys. Rev. Lett. 49: 823 (1982)
G.D. Watkins, Negative-U properties for point defects in silicon, in: “Defects in Semiconductors”, J. Narayan and T.Y. Tan, eds., North Holland, New York (1981)
G.A. Baraff, E.O. Kane, and M. Schluter, Silicon vacancy: a possible “Anderson negative-U” system, Phys. Rev. Lett. 43:956 (1979)
R.A. Street and D.K. Biegelsen, The spectroscopy of localized states, in: “The Physics of hydrogenated amorphous silicon II”, J. D. Joannopoulos and G. Lucovsky, eds., Springer, Berlin (1984)
R.A. Street, D.K. Biegelsen, W.B. Jackson, N.M. Johnson, and M. Stutzmann, Dopant and defect states in a-Si:H, Phil. Mag. B. 52: 235 (1985)
D. Adler, Defects in amorphous chalcogenides and silicon, J. Phys. (Paris) 42: C4–3 (1981)
Y. Bar-Yam and J.D. Joannopoulos, Dangling Bond in a-Si:H, Phys. Rev. Lett. 56: 2203 (1986)
D.K. Biegelsen and M. Stutzmann, Hyperfine studies of dangling bonds in amorphous silicon, Phys. Rev. B. 33: 3006 (1986)
H. Dersch, J. Stuke, and J. Beichler, Electron spin resonance of doped glow-discharge amorphous silicon, Phys. stat. sol, (b) 105: 265 (1981)
W.B. Jackson, The correlation energy of the dangling silicon bond in a-Si:H, Solid State Commun. 44: 477 (1982)
This is only true in the limit of a correlation energy, Ueff, which is large compared to the defect band width, ΔED. If Ueff / ΔED, the maximum spin density is given by Ns, max = ∫Emax+U/2 Emax-U/2 N(E)dE = ND Ueff / ΔED, where N(E) is the broad defect spectrum, and Emax is the energy at which N(E) is maximal.
E.H. Poindexter, G.J. Geradi, M.-E. Rueckel, P.J. Caplan, N.M. Johnson, and D.K. Biegelsen, Electronic traps and Pb centers at the Si/SiO2 interface: Band-gap energy distribution, J. Appl. Phys. 56: 2844 (1984)
M. Stutzmann and J. Stuke, Temperature dependence of ESR spectra of doped amorphous germanium, Phys. stat. sol, (b) 120: 225 (1983)
W.B. Jackson, S.M. Kelso, C.C. Tsai, J.W. Allen, and S.-J. Oh, Energy dependence of the optical matrix element in hydrogenated amorphous and crystalline silicon, Phys. Rev. B 31 : 5187 (1985)
N.M. Johnson and D.K. Biegelsen, Identification of deep gap states in a-Si:H by photodepopulation induced electron-spin resonance, Phys. Rev. B 31: 4066 (1985)
R.A. Street, J. Kakalios, and T.M. Hayes, Thermal equilibration in doped amorphous silicon, Phys. Rev., to be published
M. Stutzmann, to be published.
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© 1987 Plenum Press, New York
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Stutzmann, M., Jackson, W.B., Street, R.A., Biegelsen, D.K. (1987). Electron Correlation Energies in Hydrogenated Amorphous Silicon. In: Kastner, M.A., Thomas, G.A., Ovshinsky, S.R. (eds) Disordered Semiconductors. Institute for Amorphous Studies Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1841-5_45
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