Abstract
Hydrogenated amorphous silicon (a-Si:H) has won an outstanding position not only as a material appropriate for numerous thin film device applications but also as a model amorphous material apt for trying various effects. Today’s understanding of the properties of glow discharge a-Si:H cannot be imagined without the systematic research of H. Fritzsche and his coworkers (for all the numerous papers let us quote now already the classical review1).
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References
H. Fritzsche, Solar Energy Mater. 3:447 (1980).
S. Kalbitzer, G. Müller, P. C. Le Comber, and W. E. Spear, Phil. Mag. 41:439 (1980).
M. Závětová, I. P. Akimchenko, in: Tetrahedrally-Bonded Amorphous Semiconductors, ed. by D. Adler and H. Fritzsche, p. 157, Plenum Press, New York and London (1985).
A. N. Karriyev, I. P. Akimchenko, A. A. Gippius, D. P. Utkin-Edin, V. A. Dravin, Kratkie soobschenia po fizike No 2:40 (1984) in Russian.
I. P. Akimchenko, A. N. Karriyev, A. A. Gippius, J. of Non-Cryst. Solids 77–78:691 (1985).
I. P. Akimchenko, M. Závětová, A. N. Karriyev, V. V. Kras-nopevtsev, Poverchnost (1986) in print, in Russian.
R. A. Street, Adv. in Phys. 30:593 (1981).
A. N. Karriyev, I. P. Akimchenko, A. A. Gippius, Kratkie soobschenia po fizike No 7:52 (1984) in Russian.
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© 1987 Plenum Press, New York
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Akimchenko, I.P., Závětová, M., Karriyev, A.N., Krasnopevtsev, V.V. (1987). Optical and Photoelectrical Properties of a-Si:H Implanted by Mg Ions. In: Kastner, M.A., Thomas, G.A., Ovshinsky, S.R. (eds) Disordered Semiconductors. Institute for Amorphous Studies Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1841-5_43
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DOI: https://doi.org/10.1007/978-1-4613-1841-5_43
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