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Disordered Semiconductors pp 395–400Cite as

Optical and Photoelectrical Properties of a-Si:H Implanted by Mg Ions

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Part of the book series: Institute for Amorphous Studies Series ((IASS))

Abstract

Hydrogenated amorphous silicon (a-Si:H) has won an outstanding position not only as a material appropriate for numerous thin film device applications but also as a model amorphous material apt for trying various effects. Today’s understanding of the properties of glow discharge a-Si:H cannot be imagined without the systematic research of H. Fritzsche and his coworkers (for all the numerous papers let us quote now already the classical review1).

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References

  1. H. Fritzsche, Solar Energy Mater. 3:447 (1980).

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  2. S. Kalbitzer, G. Müller, P. C. Le Comber, and W. E. Spear, Phil. Mag. 41:439 (1980).

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  3. M. Závětová, I. P. Akimchenko, in: Tetrahedrally-Bonded Amorphous Semiconductors, ed. by D. Adler and H. Fritzsche, p. 157, Plenum Press, New York and London (1985).

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  4. A. N. Karriyev, I. P. Akimchenko, A. A. Gippius, D. P. Utkin-Edin, V. A. Dravin, Kratkie soobschenia po fizike No 2:40 (1984) in Russian.

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  5. I. P. Akimchenko, A. N. Karriyev, A. A. Gippius, J. of Non-Cryst. Solids 77–78:691 (1985).

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  6. I. P. Akimchenko, M. Závětová, A. N. Karriyev, V. V. Kras-nopevtsev, Poverchnost (1986) in print, in Russian.

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  7. R. A. Street, Adv. in Phys. 30:593 (1981).

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  8. A. N. Karriyev, I. P. Akimchenko, A. A. Gippius, Kratkie soobschenia po fizike No 7:52 (1984) in Russian.

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Authors and Affiliations

  1. P. N. Lebedev Physical Institute of the Acad. of Sci. USSR, 117924, Moscow, USSR

    I. P. Akimchenko, A. N. Karriyev & V. V. Krasnopevtsev

  2. Czechosl. Acad. of Sci., Institute of Physics, 180 40, Prague 8, Czechoslovakia

    M. Závětová

Authors
  1. I. P. Akimchenko
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  2. M. Závětová
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  3. A. N. Karriyev
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  4. V. V. Krasnopevtsev
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Editor information

Editors and Affiliations

  1. Massachusetts Institute of Technology, Cambridge, Massachusetts, USA

    Marc A. Kastner

  2. AT&T Bell Laboratories, Murray Hill, New Jersey, USA

    Gordon A. Thomas

  3. Energy Conversion Devices, Inc., Troy, Michigan, USA

    Stanford R. Ovshinsky

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© 1987 Plenum Press, New York

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Akimchenko, I.P., Závětová, M., Karriyev, A.N., Krasnopevtsev, V.V. (1987). Optical and Photoelectrical Properties of a-Si:H Implanted by Mg Ions. In: Kastner, M.A., Thomas, G.A., Ovshinsky, S.R. (eds) Disordered Semiconductors. Institute for Amorphous Studies Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1841-5_43

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  • DOI: https://doi.org/10.1007/978-1-4613-1841-5_43

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4612-9028-5

  • Online ISBN: 978-1-4613-1841-5

  • eBook Packages: Springer Book Archive

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