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An Extension of Einstein’s Treatment of Spontaneous Emission

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Book cover Disordered Semiconductors

Part of the book series: Institute for Amorphous Studies Series ((IASS))

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Abstract

Einstein’s detailed balance argument in which the concept of spontaneous emission was first introduced is used to demonstrate that spontaneous emission is a classical phenomenon and is not a consequence of zero point quanta as is widely believed. The average rates of photoinduced excitation and emission are also computed classically.

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References

  1. A. Einstein, Phys. Z. 18, 121 (1917).

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  2. R.R. Puri, J.O. S.A. 2, 447 (1985).

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  4. W. Heitler, The Quantum Theory of Radiation, p. 128, The University Press, Oxford, 1953.

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  5. Leonard Schiff, Quantum Mechanics, p. 400, McGraw-Hill, New York, 1955.

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  6. A. Rose, Physics of Disordered Materials, p. 391 Edited by D. Adler, H. Fritzsche & S.R. Ovshinsky, The Plenum Press, New York, 1985.

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© 1987 Plenum Press, New York

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Rose, A. (1987). An Extension of Einstein’s Treatment of Spontaneous Emission. In: Kastner, M.A., Thomas, G.A., Ovshinsky, S.R. (eds) Disordered Semiconductors. Institute for Amorphous Studies Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1841-5_42

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  • DOI: https://doi.org/10.1007/978-1-4613-1841-5_42

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4612-9028-5

  • Online ISBN: 978-1-4613-1841-5

  • eBook Packages: Springer Book Archive

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