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Picosecond Photomodulation Studies of Carrier Trapping in a-Si:H

  • Z. Vardeny
  • J. Tauc
Part of the Institute for Amorphous Studies Series book series (IASS)

Abstract

Subnanosecond trapping in gap states of photogenerated carriers in doped, compensated and undoped a-Si:H, and a—Si:H/a—SiNx:H multilayer structures, was studied by the picosecond pump and probe technique. In undoped a-Si:H the photoexcited carriers are trapped in band-tail states and in compensated a-Si:H in impurities introduced by doping. In singly doped a-Si:H the photoexcited majority carriers are trapped in impurities while the minority carriers are trapped in charged dangling bonds introduced by doping. In a—Si:H/a—SiNx:H superlattices photocarriers are trapped in interface related defects. The transport dynamics of the trapping process is in all cases dispersive.

Keywords

Minority Carrier Deep Trap Photogenerated Carrier Amorphous Semiconductor Shallow Trap 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1987

Authors and Affiliations

  • Z. Vardeny
    • 1
  • J. Tauc
    • 1
  1. 1.Division of Engineering and Department of PhysicsBrown UniversityProvidenceUSA

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