Picosecond Photomodulation Studies of Carrier Trapping in a-Si:H

  • Z. Vardeny
  • J. Tauc
Part of the Institute for Amorphous Studies Series book series (IASS)


Subnanosecond trapping in gap states of photogenerated carriers in doped, compensated and undoped a-Si:H, and a—Si:H/a—SiNx:H multilayer structures, was studied by the picosecond pump and probe technique. In undoped a-Si:H the photoexcited carriers are trapped in band-tail states and in compensated a-Si:H in impurities introduced by doping. In singly doped a-Si:H the photoexcited majority carriers are trapped in impurities while the minority carriers are trapped in charged dangling bonds introduced by doping. In a—Si:H/a—SiNx:H superlattices photocarriers are trapped in interface related defects. The transport dynamics of the trapping process is in all cases dispersive.


Minority Carrier Deep Trap Photogenerated Carrier Amorphous Semiconductor Shallow Trap 
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Copyright information

© Plenum Press, New York 1987

Authors and Affiliations

  • Z. Vardeny
    • 1
  • J. Tauc
    • 1
  1. 1.Division of Engineering and Department of PhysicsBrown UniversityProvidenceUSA

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