Abstract
An important family of amorphous (a-) semiconductors is chosen to demonstrate current state-of-the-art techniques in x-ray absorption speectroscopy (XAS). We first briefly review recent developments in XAS methods before discussing applications to amorphous arsenic trisulfide (a-As2S3) and related systems. Investigations of XAS on a-As2S3 are shown to result in: an ability to use XAS to measure bond strengths, a better understanding of reversible photo-darkeningj and development of a technique for crystallizing pure As2S3 from the bulk glass.
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© 1987 Plenum Press
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Sayers, D.E., Yang, C.Y., Paesler, M.A. (1987). X-ray Absorption Studies of Amorphous Arsenic Chalcogenide Semiconductors. In: Kastner, M.A., Thomas, G.A., Ovshinsky, S.R. (eds) Disordered Semiconductors. Institute for Amorphous Studies Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1841-5_31
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DOI: https://doi.org/10.1007/978-1-4613-1841-5_31
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