Abstract
Results are reported of current transients after a voltage step is applied to an a-As2Se3 sample with an oxidized Al contact. Most of the results can be explained using the multiple-trapping model if it is assumed that there is a hole-accumulation region near the contact.
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© 1987 Plenum Press, New York
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Gibson, D.D., Kastner, M.A. (1987). Current Transient Studies of Al-a-As2Se3 Contacts. In: Kastner, M.A., Thomas, G.A., Ovshinsky, S.R. (eds) Disordered Semiconductors. Institute for Amorphous Studies Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1841-5_26
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DOI: https://doi.org/10.1007/978-1-4613-1841-5_26
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