Abstract
A mechanism is proposed to account for the ability of Bi to dope electrically certain chalcogenide glasses. EXAFS experiments have shown that there is a significant change in the local structural environment of the Bi at compositions close to the critical concentration of Bi (10 at. %) at which the p-n transition takes place. These structural changes are interpreted in terms of a model in which, according to the ideas of Fritzsche and Kastner, the charged impurity causes electrical doping by upsetting the equilibrium between native charged defects.
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Elliott, S.R. (1987). A Model for the Electrical Doping of Chalcogenide Glasses by Bismuth. In: Kastner, M.A., Thomas, G.A., Ovshinsky, S.R. (eds) Disordered Semiconductors. Institute for Amorphous Studies Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1841-5_25
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DOI: https://doi.org/10.1007/978-1-4613-1841-5_25
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