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On the Relationship Between ESR and Photodarkening in Glassy As2S3

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Disordered Semiconductors

Part of the book series: Institute for Amorphous Studies Series ((IASS))

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Abstract

Ever since the discovery of optically-induced paramagnetism in the chalcogenide glasses there have been attempts to correlate optically-induced electron spin resonance (ESR) with various metastable optical effects. One of the most universal and most prominent optical effects is the so-called photodarkening (PD) process which occurs in essentially all chalcogenide glasses.1–5 The PD effect is a shift of the optical absorption edge to lower energies after irradiation with light of energies near that of the optical band gap. The PD effect has also been observed in some oxide glasses6 such as As2O3, but the presence of a group VI element appears to be necessary since no PD is observed in such materials as amorphous arsenic7 (a-As) or amorphous silicon (a-Si).

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© 1987 Plenum Press, New York

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Hautala, J., Liu, J.Z., Taylor, P.C. (1987). On the Relationship Between ESR and Photodarkening in Glassy As2S3 . In: Kastner, M.A., Thomas, G.A., Ovshinsky, S.R. (eds) Disordered Semiconductors. Institute for Amorphous Studies Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1841-5_20

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  • DOI: https://doi.org/10.1007/978-1-4613-1841-5_20

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4612-9028-5

  • Online ISBN: 978-1-4613-1841-5

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