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Impurity Bands in Silicon and Germanium

  • Nevill Mott
Part of the Institute for Amorphous Studies Series book series (IASS)

Abstract

An account is given of some of the developments which have led to a better understanding of conduction in impurity bands, since the work of Hellmut Fritzsche opened up the subject.

Keywords

Anderson Model Localization Length Impurity Band Mobility Edge Random Lattice 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Plenum Press, New York 1987

Authors and Affiliations

  • Nevill Mott
    • 1
  1. 1.Cavendish LaboratoryCambridgeUK

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