Abstract
Pressure has proven to be a useful technique for understanding the structual and electronic properties of condensed matter. One can use pressure as an independent variable to change the volume and electronic states in a controlled way. As a consequence, the compression gives rise to a change in electronic properties and eventually to a new ground state with different electronic properties. One of the most spectacular results of high-pressure research over the past three decades has been demonstrated that the structural and electronic transitions are unique phenomena (1). High-pressure research can be traditionally divided into two categories: one deals with intrinsically high-pressure phenomena such as insulator-metal transitions; the other involves pressure-induced effects or dependences for better understanding of the structural and electronic properties at one atmosphere.
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References
H. G. Drickamer, in Solid State Physics, edited by F. Seitz and Turnbull (Academic Press, New York) 1965, p. 1.
N. Lifshitz, A. Jayaraman and R. A. Logan, Phys. Rev. B21 670 (1980).
N. Chand, T. Henderson, J. Klem, W. T. Masselink, R. Fisher, Y. Chang and H. Morkoc, Phys. Rev. B30 4481 (1984).
E. F. Schubert and K. Ploog, Phys. Rev. B30 7021 (1984).
D. V. Lang and R. A. Logan, Phys. Rev. Lett. 39. 635 (1977).
D. V. Langp R. A. Logan and M. Jaros, Phys. Rev. B19 1015 (1979).
T. Baba, T. Mizutani and M. Ogawa, Jpn. J. Appl. Phys. 22. L627 (1983).
M. Mizuta, M. Tachikawa, H. Kukimoto and S. Minomura, Jpn. J. Appl. Phys. 24 L143 (1985).
M. Tachikawa, M. Mizuta, H. Kukimoto and S. Minomura, Jpn. J. Appl. Phys. 24 L921 (1985).
M. Tachikawa, T. Fujisawa, H. Kukimoto, A. Shibata, G. Oomi and S. Minomura, Jpn. J. Appl. Phys. 24 L893 (1985).
A. S. Barker, Jr., J. I. Merz and A. C. Gossard, Phys. Rev. B17 3181 (1978).
B. Jusserand and J. Sapriel, Phys. Rev. B24 7194 (1981).
J. Nakahara, S. Minomura, T. Ichimori and H. Kukimoto, to be published.
A. S. Barker, Jr., and A. J. Sievers, Rev. Mod. Phys. 47 Suppl. No. 2 S1 (1975).
R. Bonneville, Phys. Rev. B24 1987 (1981).
Y. Onodera and Y. Toyozawa, J. Phys. Soc. Jpn. 24 341 (1968).
G. Dolling and J. I. T. Waugh, in Lattice Dynamics, edited by R. F. Wallis (Pergamon Press, London) 1965, P. 19.
M. Tachikawa, Thesis (Tokyo Institute of Technology, 1986).
A. K. Saxena, Solid State Electron, 25 127 (1982).
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© 1987 Plenum Press, New York
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Minomura, S. (1987). Pressure-Induced Effects on Phonons and Gap States in Alloy Semiconductors. In: Kastner, M.A., Thomas, G.A., Ovshinsky, S.R. (eds) Disordered Semiconductors. Institute for Amorphous Studies Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1841-5_16
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DOI: https://doi.org/10.1007/978-1-4613-1841-5_16
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