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Low Frequency Conductivity Anomalies of Strongly Disordered Semiconductors

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Part of the book series: Institute for Amorphous Studies Series ((IASS))

Abstract

Various alternatives for the asymptotic behaviour of conductivity, polarizability, and current spectrum of disordered semiconductors near the mobility edge are discussed within a self consistent theory for current relaxations and density fluctuations.

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© 1987 Plenum Press, New York

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Götze, W. (1987). Low Frequency Conductivity Anomalies of Strongly Disordered Semiconductors. In: Kastner, M.A., Thomas, G.A., Ovshinsky, S.R. (eds) Disordered Semiconductors. Institute for Amorphous Studies Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1841-5_11

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  • DOI: https://doi.org/10.1007/978-1-4613-1841-5_11

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4612-9028-5

  • Online ISBN: 978-1-4613-1841-5

  • eBook Packages: Springer Book Archive

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