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Introduction

  • Marc A. Kastner
  • Gordon A. Thomas
  • Stanford R. Ovshinsky
Part of the Institute for Amorphous Studies Series book series (IASS)

Abstract

It is hard to imagine now, in the 1980’s, how little interest there was in the 1950’s in the electronic properties of disordered semiconductors (amorphous or crystalline with high impurity or defect density). Heavily-doped semiconductors were considered dirty systems, unworthy of careful study. Today, one can find in many textbooks a section on the metal-insulator transition which inevitably includes or refers to the famous figure from the research group of Fritzsche at the University of Chicago elaborating the properties of this trnsition in doped, compensated Ge. That work began an evolution which has made the problem of the metal-insulator transition in disordered materials one of the most sophisticated and elegant in solid-state physics.

Keywords

Electronic Property Defect Density Amorphous Silicon Related Material Assistant Director 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

Copyright information

© Plenum Press, New York 1987

Authors and Affiliations

  • Marc A. Kastner
    • 1
  • Gordon A. Thomas
    • 2
  • Stanford R. Ovshinsky
    • 3
  1. 1.Massachusetts Institute of TechnologyCambridgeUSA
  2. 2.AT&T Bell LaboratoriesMurray HillUSA
  3. 3.Energy Conversion Devices, Inc.TroyUSA

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