Abstract
The IV–VI semiconductor group has received much attention over the last 15 years because it may be used in several different types of technological applications, such as optoelectronic devices like photovoltaic detectors and tunable infrared diode lasers, and in thermoelectric energy conversion, The technological properties of this group are directly related to both their fundamental properties and their methods of synthesis. For instance, some pseudobinary semiconductors, such as Pb1-x SnxTe, have a composition-dependent energy gap which, according to the proposal of Dimmock [1], has a band model which can be made arbitrarily small by varying the stoichiometry, i.e., the lead to tin ratio, as shown in Figure 1. However, the commonly used single crystal growth methods from the melt induce a significant concentration gradient along the growth axis.
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References
J. O. Dimmock, J. Melngailis, and A. Y. Strauss, Phys. Rev. Lett. 16, 1193 (1966).
V. Fano, Prog. Crystal Growth Charach. 3, 287 (1981).
V. Fano, E. Maniezzi, I. Ortalli, and R. Pergolari, Materials Chemistry, 7, 509 (1982).
V. Fano and I. Ortalli, J. Phys. Chem. Solids, 37, 729 (1976).
T. L. Koval1chik and Yu. P. Maslakovets,Zh. Texh. Fiz. 26, 2417 (1956).
J. Dannon, Rev. Mod. Phys. 36, 459 (1964).
V. Fano and I. Ortalli, J. Mater. Science 12, 210 (1977).
V. Fano and I. Ortalli, J. Chem. Phys. 61, 5017 (1974).
J. K. Lees and P. A. Flinn, J. Chem. Phys. 48, 882 (1968).
A. Antonini, V. Fano, I. Ortalli, and A. Vera, Phys. Stat. Sol. (b) 114, 585 (1982).
A. Antonini, V. Fano, and I. Ortalli, Phys. Stat. Sol. (b) 120, K15 (1983).
Y. N. Tsang and M. L. Cohen, Solid State Com. 10, 871 (1972).
S. H. Wengle, Phys.Lett. 45A, 401 (1973).
J. S. Stevens and W. L. Gettys, Mössb. Eff. Data, Decemb. 14, 1981 (India).
T. C. Gibb, R. Greatrex, N. N. Greenwood, and A. C. Sarmo, J. Chem. Soc., A212 (1970).
H. Krebs, Acta Cryst. 9, 95 (1956).
S. L. Ruby and G. K. Shenoy, in “Mössbauer Isomer Shifts”, G. K. Shenoy and F. E. Wagner, eds., North-Holland Publ. p. 627 (1978).
V. Fano, G. Fedeli, and I. Ortalli, Solid State Comm. 22, 467 (1977).
I. Ortalli, G. Fedeli, K. L. I. Kobayashi, and K. F. Komatsubara, Journal de Physique 40, C2 - 696 (1979).
G. Shirane and Y. Yamada, Phys. Rev. 117, 858 (1969).
J. P. Canner, C. M. Yagnik, R. Gerson, and J. James, Journ. Appl. Phys. 42, 4708 (1971).
M. Izumi, Y. Hamaguchi, K. F. Komatsubara, and Y. Kato, J. Phys. Soc. Japan 38, 443 (1975).
O. Hatta and K. L. I.Kobayashi, Solid State Communication 22, 775 (1977).
I. Ortalli, Ferroelectrics, 54, 325 (1984).
J. L. Birman, Journal de Physique 29, C4–151 (1968).
M. Lefkowitz, M. Shields, G. Dolling, W. J. C. Buyers, and R. A. Cowley, J. Phys. Soc. Japan Suppl. 28, 249 (1970).
V. Fano, E. Maniezzi, I. Ortalli, N. Burriesci, M. Petrera, Journal de Physique 40, C2–624 (1979).
V. V. Chekin, O. P. Balkashin, and G. D. Sultanov, Ukr. Fiz. Zh. 14, 102 (1969).
A. Rigamonti and G. Petrini, Phys. Status Solidi, 41, 581 (1970).
R. C. Knauer, Phys. Lett. 33A, 313 (1970).
V. Fano, E. Maniezzi, and I. Ortalli, Journal de Physique, 41, Cl–325 (1980).
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© 1986 Plenum Press, New York
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Ortalli, I., Fano, V. (1986). Use of Mössbauer Spectroscopy in the Study of IV–VI Semiconductors. In: Long, G.J., Stevens, J.G. (eds) Industrial Applications of the Mössbauer Effect. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1827-9_41
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DOI: https://doi.org/10.1007/978-1-4613-1827-9_41
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