In order to bring out the importance of Computer-Aided Design (CAD) in VLSI (Very-Large-Scale Integration) device design, it is nesessary to discuss the evolotion og the Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) and the isses involved in its scaling. MOSFETs, first proposed 50 years ago, are based on the principle of modulating longitudinal electrical conductance by varying a transverse electrical field. Since its conception, MOSFET technology has improved steadily and has become the primarily because of the simple device structure. VLSI development for greater functional complexity and vircuit performance on a single chip is strongly motivated by the reduced cost per device and has been achieved in part by larger chop areas, but predominantly by smaller device dimensions and the clever design of devices and circuits.
KeywordsConstant Field Device Operation Transverse Electrical Field Effective Channel Length Electric Field Pattern
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