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Overview

  • Kit Man Cham
  • Soo-Young Oh
  • John L. Moll
  • Keunmyung Lee
  • Paul Vande Voorde
  • Daeje Chin
Part of the The Kluwer International Series in Engineering and Computer Science book series (SECS, volume 53)

Abstract

In order to bring out the importance of Computer-Aided Design (CAD) in VLSI (Very-Large-Scale Integration) device design, it is nesessary to discuss the evolotion og the Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) and the isses involved in its scaling. MOSFETs, first proposed 50 years ago, are based on the principle of modulating longitudinal electrical conductance by varying a transverse electrical field. Since its conception, MOSFET technology has improved steadily and has become the primarily because of the simple device structure. VLSI development for greater functional complexity and vircuit performance on a single chip is strongly motivated by the reduced cost per device and has been achieved in part by larger chop areas, but predominantly by smaller device dimensions and the clever design of devices and circuits.

Keywords

Constant Field Device Operation Transverse Electrical Field Effective Channel Length Electric Field Pattern 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Reference

  1. [1]
    R.H. Dennard, F.H. Gaensslen, H.N. Yu, V.L. Rideout, E. Bassous, and A. Le Blanc, “Design of Ion-Implanted MOSFET’s with very Small Physical Dimensions,” IEEE J. Solod-State Circuits, SC-9, Oct 1974, pp. 256–268CrossRefGoogle Scholar

Copyright information

© Kluwer Academic Publishers, Boston 1988

Authors and Affiliations

  • Kit Man Cham
    • 1
  • Soo-Young Oh
    • 1
  • John L. Moll
    • 1
  • Keunmyung Lee
    • 1
  • Paul Vande Voorde
    • 1
  • Daeje Chin
    • 2
  1. 1.Hewlett-Packard LaboratoriesUK
  2. 2.Samsung SemiconductorUK

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