RF modelling of MOSFETs

  • D. B. M. Klaassen
  • B. Nauta
  • R. R. J. Vanoppen

Abstract

The accuracy of the Philips compact MOS model, MOS MODEL 9, has been investigated for a number of quantities, that are important for RF circuit design. On-wafer S-parameter measurements have been performed on MOS devices as a function of the frequency up to the GHz-range. From these S-parameters important RF quantities such as input impedance, transconductance, current and voltage gain etc., have been obtained. A comparison between experimental results and model calculations will be presented.

Keywords

Microwave Imped Quilan 

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Copyright information

© Kluwer Academic Publishers 2001

Authors and Affiliations

  • D. B. M. Klaassen
    • 1
  • B. Nauta
    • 1
  • R. R. J. Vanoppen
    • 1
  1. 1.Philips Research LaboratoriesEindhovenThe Netherlands

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