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Heterostructures and Strained Superlattices in the Ge-Si System: Growth, Structure Defects, and Electronic Properties

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Growth of Crystals

Part of the book series: Poct Kpиctaллob / Rost Kristallov / Growth of Crystals ((GROC,volume 20))

Abstract

Heterostructures and superlattices based on Si, Ge, and their solid solutions have recently generated much interest for application in electronic devices [1].

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Authors
  1. M. G. Mil’vidskii
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  2. V. I. Vdovin
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  3. L. K. Orlov
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  4. O. A. Kuznetsov
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  5. V. M. Vorotyntsev
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  1. Institute of Crystallography, Russian Academy of Sciences, Moscow, Russia

    E. I. Givargizov  & A. M. Melnikova  & 

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Mil’vidskii, M.G., Vdovin, V.I., Orlov, L.K., Kuznetsov, O.A., Vorotyntsev, V.M. (1996). Heterostructures and Strained Superlattices in the Ge-Si System: Growth, Structure Defects, and Electronic Properties. In: Givargizov, E.I., Melnikova, A.M. (eds) Growth of Crystals. Poct Kpиctaллob / Rost Kristallov / Growth of Crystals, vol 20. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1141-6_2

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  • DOI: https://doi.org/10.1007/978-1-4613-1141-6_2

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