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Growth of Crystals pp 3–12Cite as

Direct Synthesis of Nanostructures in the Germanium-Silicon System by Molecular-Beam Epitaxy

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Part of the book series: Poct Kpиctaллob / Rost Kristallov / Growth of Crystals ((GROC,volume 20))

Abstract

Direct synthesis, self-organization, or spontaneous formation of semiconducting nanostructures during molecular-beam epitaxy (MBE) are synonyms that are presently used to describe methods for preparing heterostructures with isolated nanometer-sized regions in which microstructuring is not applied. These methods provide new capabilities for fabricating quantum-sized features such as tilted, lateral and serpentine superlattices and systems with quantum threads and points [1–5]. Direct synthesis enables systems with a high density of elements with limitingly small dimensions to be formed. This is in contrast with selective growth and electron lithography, which are strictly limited to the minimal dimensions of separate elements [6].

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Authors
  1. O. P. Pchelyakov
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  2. L. V. Sokolov
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Editors and Affiliations

  1. Institute of Crystallography, Russian Academy of Sciences, Moscow, Russia

    E. I. Givargizov  & A. M. Melnikova  & 

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Pchelyakov, O.P., Sokolov, L.V. (1996). Direct Synthesis of Nanostructures in the Germanium-Silicon System by Molecular-Beam Epitaxy. In: Givargizov, E.I., Melnikova, A.M. (eds) Growth of Crystals. Poct Kpиctaллob / Rost Kristallov / Growth of Crystals, vol 20. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1141-6_1

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  • DOI: https://doi.org/10.1007/978-1-4613-1141-6_1

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4612-8445-1

  • Online ISBN: 978-1-4613-1141-6

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