Corrosion Prevention in Metals Using Layered Semi-conductor/Insulator Structures Forming an Interfacial Electronic Barrier

  • F. C. Jain
  • J. J. Rosato
  • K. S. Kalonia
  • V. S. Agarwala
Part of the Polymer Science and Technology book series (POLS, volume 37)


A new approach to corrosion prevention involving the use of layered semiconductor/insulator films on metal surfaces is described. It is shown that the improved corrosion protection is due to the existence of a built-in electronic barrier at the metal-semiconductor (MS) or metal(thin) insulator-semiconductor (MIS) interfaces. This is in contrast to the conventional techniques which rely on physical barriers (e.g., paints) or high resistivity oxide/nitride films at the exposed metal surfaces. The electronic barrier, which arises due to charge redistribution at the MS or MIS interface, serves to impede the transfer of electrons from the metal surface to foreign oxidizing species, thereby preventing oxidation. Specific structures fabricated and tested include: Al-Indium Tin Oxide (ITO) for MS and Al-Si02-ITO for MIS configurations. A comparison with Al-S13N4 (passive barrier) is also made. High purity (single and polycrystalline) and commercial purity aluminum and aluminum alloy (7075-T6) samples were used in this study. Cathodic and anodic polarization data, weight-loss measurements, and the results of physical, optical and electronic characterizations are presented for numerous aluminum samples. It is shown that the magnitude of the electronic barrier height, and the resultant corrosion protection, is enhanced by: (1) the presence of a thin (20-100Å) Si02 (insulator) layer, and (2) an increased indium/tin ratio in ITO films, which results in a larger energy gap. The application of the active electronic barrier concept to semiconducting polymers such as doped polyacetylene, phthalocyanine and chlorophyll is also discussed.


Chemical Vapor Deposition Aluminum Substrate Chemical Vapor Deposition Reactor Corrosion Prevention Chemical Vapor Deposition Technique 
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  1. 1.
    F.C. Jain, J.J. Rosato, K.S. Kalonia, V.S. Agarwala, “Formation of an Active Electronic Barrier at A1/Semiconductor Interfaces: A Novel Approach in Corrosion Prevention,” Corrosion J., 42, 700 (1986).CrossRefGoogle Scholar
  2. 2.
    F.C. Jain, “Semiconductor/Insulator Films in Corrosion Prevention,” private communications, U.S. Naval Air Development Center, Warminster, Pennsylvania, September (1980).Google Scholar
  3. 3.
    S.M. Sze, Physics of Semiconductor Devices, 2nd ed., John Wiley and Sons, Inc., New York, New York, (1981).Google Scholar
  4. 4.
    J.C. Scully, The Fundamentals of Corrosion, Pergamon Press, New York, New York, (1975).Google Scholar
  5. 5.
    N.D. Tomashov, Theory of Corrosion and Protection of Metals, MacMillan Publishing Co., New York, New York, (1966).Google Scholar
  6. 6.
    K. Barton, Protection Against Atmospheric Corrosion: Theories and Methods, Wiley Interscience, New York, New York, (1976).Google Scholar
  7. 7.
    V.E. Carter, Metallic Coatings for Corrosion Control, Newnes-Butterworths, Boston, Massachusetts, (1977).Google Scholar
  8. 8.
    K. Schneider, R. Bauer, H.W. Grunling, “Corrosion and Failure mechanisms of coatings for gas turbine applications,” Thin Solid Films, Vol. 54, 349 (1978).CrossRefGoogle Scholar
  9. 9.
    A.T. Fromhold, Theory of Metal Oxidation, Vol. 1-Fundamentals, Series on Defects in Crystalline Solids, Vol. 9, North-Holland Publishing Co., Amsterdam, The Netherlands, (1976).Google Scholar
  10. 10.
    A.T Fromhold, Theory of Metal Oxidation. Vol. 1-Space Charge, Series on Defects on Solids, Vol. 12, North-Holland Publishing Co., Amsterdam, The Netherlands, (1980).Google Scholar
  11. 11.
    A.G. Milnes, D.L. Feucht, Heterolunctions and Metal-Semiconductor Junctions, Academic Press, New York, New York (1972).Google Scholar
  12. 12.
    RS Muller, TI Kamins, Device Electronics for Integrated Circuits, John Wiley and Sons, Inc., New York, New York (1977)Google Scholar
  13. 13.
    JM Andrews, JC Phillips, “Chemical bonding and structure of metal-semiconductor interfaces,” Phys. Rev. Lett., 35,, 56 (1975).CrossRefGoogle Scholar
  14. 14.
    LJ Brillson, “Chemically induced charge redistribution at A1-GaAs interfaces,” Phys. Rev. Lett., 42, 397 (1979).CrossRefGoogle Scholar
  15. 15.
    G. Ottviani, KN Tu, JW Mayer, Interfacial reaction and Schottky barrier in metal-silicon system, Phys. Rev. Lett., 44, 284 (1980). (Reference is made to the Proceedings of the Conference on Physics and Chemistry of Semiconductor Interfaces (PCSI) (1983, 1984).CrossRefGoogle Scholar
  16. 16.
    A. Goetzberger, E. Kalusmann M.J. Schulz, “Interface states on semiconductor/ insulator surfaces,” CRC Critical Rev. in Solid State Sciences, 6:1 (1976).CrossRefGoogle Scholar
  17. 17.
    W. Monch, “Role of Virtual Gap States and Defects in Metal-Semiconductor Contacts,” Phys. Rev. Lett, 58, 1260 (1987).CrossRefGoogle Scholar
  18. 18.
    S. Doniach, K.K. Chin, I. Lindau, W.E. Spicer, Microscopic Metal Clusters and Schottky-Barrier Formation, Phys. Rev. Lett., 58, 591 (1987).CrossRefGoogle Scholar
  19. 19.
    R.S. Muller, T. I. Kamins, Device Electronics for Integrated Circuits, John Wiley and Sons, Inc., New York, New York (1977).Google Scholar
  20. 20.
    E.H. Nicollian, B. Schwartz, D.J. Coleman, Jr., R.M. Ryder, J. R. Brews, “Influence of thin oxide layer between metal and semi-conductor on Schottky diode behavior,” J. Vac. Sci. Technol. 13: 1047 (1976).CrossRefGoogle Scholar
  21. 21.
    F.C. Jain, J.W. Marciniec, “A single-heterostructure MOS injection laser,” IEEE J. Quantum Electron. QE-14; 398 (1978).CrossRefGoogle Scholar
  22. 22.
    F.C. Jain, C.S. Nichols, Electronic transport and emission of light in Au-S102-GaAsP interfaces. Bull. Am. Phys. Soc. 25, 586 (1979).Google Scholar
  23. 23.
    M. Froment, Passivity of Metals and Semiconductors, Elsevier, 1983 (Proc. 5th Int. Symp. Passivity, Bombanness, France, May 30-June 3, 1983 ).Google Scholar
  24. 24.
    J.P. Dodelet, “Characteristics and behavior of electrodeposited surfactant phthalocyanine photovoltaic cells,” J. Appl. Phys. 53, 4270 (1982).CrossRefGoogle Scholar
  25. 25.
    N. Koshida, Y. Wachi, “Application of ion implanation for doping of polyacetylene films,” Appl. Phys. Lett. 45, 436 (1984).CrossRefGoogle Scholar
  26. 26.
    Y. Osada, A. Mizumoto, “Preparation and electrical properties of polymeric copper phthalocyanine thin films by plasma polymerication,” J. Appl. Phys. 59, 1776 (1986).CrossRefGoogle Scholar
  27. 27.
    V.S. Agarwala, F.R. Longo, Proc. Int. Symp. Honoring Dr. Norman Hackerman (October 19–24, 1986, San Diego); Surfaces, Inhibition and Passivation, Eds. E. McCafferty, R.J. Budd, J. Electrochem. Soc., 86–7, 658 (1986).Google Scholar
  28. 28.
    F.C. Jain, “Semiconductor/Insulator Films for Corrosion,” Technical Report NADC #8602860, Naval Air Development Center, Warminster, Pennsylvania, October 1985.Google Scholar
  29. 29.
    S. Ashok, P. Sharma, S. Fonash, “Spray-deposited ITO-Si SIS heterojunction solar cells,” IEEE Trans. Electron Devices ED-27, 725 (1980).CrossRefGoogle Scholar
  30. 30.
    E.L. Jordan, “A diffusion mask of S102,” J. Electrochem, Soc., 108, 478 (1961).CrossRefGoogle Scholar
  31. 31.
    M.G. Fontana, N.D. Greene, Corrosion Engineering, McGraw-Hill Book Co., New York, New York (1978).Google Scholar
  32. 32.
    R.K. Sadhir, H.E. Saunders, Plasma processes for Electrical and Electronics Applications, IEEE Electrical Insulation Mag., 2, 8 (1986).CrossRefGoogle Scholar

Copyright information

© Plenum Press, New York 1988

Authors and Affiliations

  • F. C. Jain
    • 1
  • J. J. Rosato
    • 1
  • K. S. Kalonia
    • 1
  • V. S. Agarwala
    • 2
  1. 1.Electrical and Systems Enginering Dept. and Institute of Materials ScienceThe University of ConnecticutStorrsUSA
  2. 2.U.S. Naval Air Development CenterWarminsterUSA

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