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Synthesis of Buried Dielectric Layers in Silicon by Ion Implantation

  • Ian H. Wilson

Abstract

Some of the ideas presented here are expanded from a review of the synthesis of SiO2 by ion implantation written for the second radiation effects in insulators conference1. Since 1983 there have been many developments confirming (and a few contradicting) the theses and hypotheses contained therein. One major development has been the upsurge in interest in synthesis of buried layers of the nitrides and carbides of silicon and so these have been included here. This paper is an attempt to address the fundamental processes that occur when silicon is implanted with high doses of carbon, nitrogen and oxygen.

Keywords

Dislocation Loop Beam Heating Silicon Lattice Lamp Heating Nitrogen Implantation 
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Copyright information

© Plenum Press, New York 1988

Authors and Affiliations

  • Ian H. Wilson
    • 1
  1. 1.Department of Electronic & Electrical EngineeringUniversity of SurreyGuildfordEngland

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