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Synthesis of Buried Dielectric Layers in Silicon by Ion Implantation

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The Physics and Technology of Amorphous SiO2

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Abstract

Some of the ideas presented here are expanded from a review of the synthesis of SiO2 by ion implantation written for the second radiation effects in insulators conference1. Since 1983 there have been many developments confirming (and a few contradicting) the theses and hypotheses contained therein. One major development has been the upsurge in interest in synthesis of buried layers of the nitrides and carbides of silicon and so these have been included here. This paper is an attempt to address the fundamental processes that occur when silicon is implanted with high doses of carbon, nitrogen and oxygen.

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Authors and Affiliations

  1. Department of Electronic & Electrical Engineering, University of Surrey, Guildford, Surrey, GU2 5XH, England

    Ian H. Wilson

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  1. National Center for Telecommunications Studies, Meyland, France

    Roderick A. B. Devine

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© 1988 Plenum Press, New York

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Wilson, I.H. (1988). Synthesis of Buried Dielectric Layers in Silicon by Ion Implantation. In: Devine, R.A.B. (eds) The Physics and Technology of Amorphous SiO2 . Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1031-0_62

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  • DOI: https://doi.org/10.1007/978-1-4613-1031-0_62

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