The Influence of High Temperature Nitrogen Annealing on the Electrical Properties of Plasma Nitrided Oxides

  • J. Camargo da Costa
  • M. El-Sayed


The effect of nitrogen gas annealing on intrinsic electrical properties of thin plasma nitrided oxide films is studied. It is shown that nitridation related trap densities and other electrical properties have been considerably improved after a high temperature (1 000°C, 1 hour) nitrogen annealing.


Ammonia Plasma Interface State Density Positive Charge Density Auger Depth Profile Nitrided Oxide 
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Copyright information

© Plenum Press, New York 1988

Authors and Affiliations

  • J. Camargo da Costa
    • 1
    • 2
  • M. El-Sayed
    • 1
    • 3
  1. 1.D. LETI/IRDI-Commissariat à l’Energie Atomique-CEN/G 85 XGrenoble, CedexFrance
  2. 2.Depto. de Eng.Electrica-Univ. de BrasiliaBrasil
  3. 3.Electrical Engineering DepartmentAlexandria UniversityEgypt

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