Growth and Structure of Argon Laser Grown SiO2
The use of intense beams of photons from 193 nm to 10.6 μ to oxidise single crystal silicon (c-Si) in dry oxygen (O2) has been widely studied using lasers and incoherent light sources1. Depending upon the precise wavelength of the radiation used, thermal and/or non-thermal reactions can be initiated. Here we review the results of a recent experiment with visible radiation, which indicates that the induced reaction is thermally dominated, and that there is an additional wavelength dependent component to the overall mechanism2. We also present new results of a study by infrared spectrometry of the bonding nature of the films grown by this method.
KeywordsOxide Thickness Fast Reaction Rate Incoherent Light Sources1 Pulse Laser Processing Precise Wavelength
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