Skip to main content
SpringerLink
Log in
Book cover

The Physics and Technology of Amorphous SiO2 pp 331–336Cite as

Growth and Structure of Argon Laser Grown SiO2

  • Chapter

  • 405 Accesses

Abstract

The use of intense beams of photons from 193 nm to 10.6 μ to oxidise single crystal silicon (c-Si) in dry oxygen (O2) has been widely studied using lasers and incoherent light sources1. Depending upon the precise wavelength of the radiation used, thermal and/or non-thermal reactions can be initiated. Here we review the results of a recent experiment with visible radiation, which indicates that the induced reaction is thermally dominated, and that there is an additional wavelength dependent component to the overall mechanism2. We also present new results of a study by infrared spectrometry of the bonding nature of the films grown by this method.

This is a preview of subscription content, log in via an institution.

Chapter
USD   29.95
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
eBook
USD   84.99
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book
USD   109.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Purchases are for personal use only

Learn about institutional subscriptions

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. I.W. Boyd, in “Dielectric Layers in Semiconductors”, ed. G.G. Bentini, E. Fogarassy, A. Golanski, Les Editions de Physique, Les Ulis (1986) and references therein.

    Google Scholar 

  2. I.W. Boyd, F. Micheli, Electronics Lett., 23:298 (1987).

    Article  Google Scholar 

  3. H.Z. Massoud, J.D. Plummer, E.A. Irene, J. Electrochem. Soc. 132:1745 (1985).

    Article  CAS  Google Scholar 

  4. G.E. Jellison, in “Pulsed Laser Processing of Semiconductors”, ed. R.F. Wood, C.W. White, R.T. Young, Vol. 23 of Semiconductors and Semimetals, Academic, New York, (1984).

    Google Scholar 

  5. F. Micheli, I.W. Boyd, Appl. Phys. Lett., 51:to be published, (1987).

    Google Scholar 

  6. J.E. Dial, R.E. Wong, J.N. Fordemwalt, J. Electrochem. Soc. 115:327 (1968).

    Article  Google Scholar 

  7. I.W. Boyd, J.I.B. Wilson, J. Appl. Phys. 53:4166 (1982).

    Article  CAS  Google Scholar 

  8. I.W. Boyd, J.I.B. Wilson, Appl. Phys. Lett. 52:320 (1987).

    Article  Google Scholar 

  9. W.A. Pliskin, H.S. Lehman, J. Electrochem. Soc. 112:1013 (1965).

    Article  CAS  Google Scholar 

  10. G. Lucovsky, M. Manitini, J.K. Srivastava, E.A. Irene, J. Vac. Sci. Techn. B5:530 (1987).

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Electronic and Electrical Engineering, University College London, London, WCIE 7JE, UK

    Francesca Micheli & Ian W. Boyd

Authors
  1. Francesca Micheli
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Ian W. Boyd
    View author publications

    You can also search for this author in PubMed Google Scholar

Editor information

Editors and Affiliations

  1. National Center for Telecommunications Studies, Meyland, France

    Roderick A. B. Devine

Rights and permissions

Reprints and permissions

Copyright information

© 1988 Plenum Press, New York

About this chapter

Cite this chapter

Micheli, F., Boyd, I.W. (1988). Growth and Structure of Argon Laser Grown SiO2 . In: Devine, R.A.B. (eds) The Physics and Technology of Amorphous SiO2 . Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1031-0_45

Download citation

  • DOI: https://doi.org/10.1007/978-1-4613-1031-0_45

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4612-8301-0

  • Online ISBN: 978-1-4613-1031-0

  • eBook Packages: Springer Book Archive

Publish with us

Policies and ethics

Search

Navigation