Metastabile and Multiply-Charged Individual Defects at the Si:SiO2 Interface
In small-area silicon metal-oxide-semiconductor field-effect transistors (MOSFETs), the fluctuating occupancy of individual Si:SiO2 interface states generates Random Telegraph Signals (RTSs) in the drain current. We have observed a new class of RTS which exhibits anomalous behaviour. We demonstrate that these signals are due to individual interface states which can exist in two or more charge-equivalent metastable states. We present results on a single defect which exhibits two-electron capture, metastability and negative-U-like behaviour.
KeywordsMetastable State Gate Voltage Drain Current Capture Time Reconstruction Mode
Unable to display preview. Download preview PDF.
- 1.M.J. Buckingham, “Noise in Electronic Devices and Systems”, Ch. 7, Ellis Horwood, Chichester, (1983).Google Scholar
- 5.M.J. Uren, M.J. Kirton and S. Collins, submitted for publication (1987).Google Scholar
- 8.L. Guttmann and S.M. Rahman, Phys. Rev. B. 33:1506 (1986).Google Scholar
- 9.C. Kittel and H. Kroemer, “Thermal Physics”, W.H. Freeman, San Francisco, (1980).Google Scholar
- 12.K. Kandiah, private communication.Google Scholar