Metastabile and Multiply-Charged Individual Defects at the Si:SiO2 Interface

  • M. J. Kirton
  • M. J. Uren
  • S. Collins


In small-area silicon metal-oxide-semiconductor field-effect transistors (MOSFETs), the fluctuating occupancy of individual Si:SiO2 interface states generates Random Telegraph Signals (RTSs) in the drain current. We have observed a new class of RTS which exhibits anomalous behaviour. We demonstrate that these signals are due to individual interface states which can exist in two or more charge-equivalent metastable states. We present results on a single defect which exhibits two-electron capture, metastability and negative-U-like behaviour.


Metastable State Gate Voltage Drain Current Capture Time Reconstruction Mode 
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Copyright information

© Plenum Press, New York 1988

Authors and Affiliations

  • M. J. Kirton
    • 1
  • M. J. Uren
    • 1
  • S. Collins
    • 1
  1. 1.Royale Signals and Radar EstablishmentGreat Malvern WorcestershireUK

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