Abstract
The present paper derives from our previous work (1–3) on modeling the time dependence of ovonic threshold switches (OTS), and DIACS (4). It is also related to our analysis (5–8) of one carrier, space-charge controlled conduction in metal-insulator metal (MIM) structures.
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References
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© 1988 Plenum Press, New York
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Callarotti, R.C. (1988). Proper Capacitance Modeling for Devices with Distributed Space Charge. In: Pryor, R.W., Schwartz, B.B., Ovshinsky, S.R. (eds) Disorder and Order in the Solid State. Institute of Amorphous Studies Series. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1027-3_10
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DOI: https://doi.org/10.1007/978-1-4613-1027-3_10
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