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Proper Capacitance Modeling for Devices with Distributed Space Charge

  • Roberto C. Callarotti
Part of the Institute of Amorphous Studies Series book series (IASS)

Abstract

The present paper derives from our previous work (1–3) on modeling the time dependence of ovonic threshold switches (OTS), and DIACS (4). It is also related to our analysis (5–8) of one carrier, space-charge controlled conduction in metal-insulator metal (MIM) structures.

Keywords

Equivalent Circuit Space Charge Relaxation Oscillation Total Impedance Unit Cross Sectional Area 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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References

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Copyright information

© Plenum Press, New York 1988

Authors and Affiliations

  • Roberto C. Callarotti
    • 1
  1. 1.INTEVEP S.A.CaracasVenezuela

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