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Sub-Bandgap Laser Probing of GaAs Devices and Circuits

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Review of Progress in Quantitative Nondestructive Evaluation

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Abstract

Standard methods for measuring solid-state device and circuit performance are inadequate at GHz speeds because they introduce parasitic inductances and capacitances that change circuit operation and characteristics. One promising noninvasive procedure that avoids these problems uses electro-optic probing to yield information on device packaging techniques; and on device and circuit performance characteristics such as voltage waveforms, timing, and propagation delays in both analog and digital circuits.

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Author information

Authors and Affiliations

  1. The Johns Hopkins University, 34th and Charles Streets, Baltimore, MD, 21218, USA

    D. M. Mechtel, A. G. Andreou, D. N. Christodoulides, J. Wagner, C. R. Westgate & C. H. Palmer

  2. Applied Physics Laboratory, Johns Hopkins Road, Laurel, MD, 20707, USA

    T. O. Poehler

Authors
  1. D. M. Mechtel
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  2. A. G. Andreou
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  3. D. N. Christodoulides
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  4. J. Wagner
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  5. C. R. Westgate
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  6. C. H. Palmer
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  7. T. O. Poehler
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Editor information

Editors and Affiliations

  1. Ames Laboratory (USDOE), Iowa State University, Ames, Iowa, USA

    Donald O. Thompson

  2. Materials Laboratory, Air Force Wright Aeronautical Laboratories, Wright-Patterson Air Force Base, Dayton, Ohio, USA

    Dale E. Chimenti

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© 1988 Plenum Press, New York

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Mechtel, D.M. et al. (1988). Sub-Bandgap Laser Probing of GaAs Devices and Circuits. In: Thompson, D.O., Chimenti, D.E. (eds) Review of Progress in Quantitative Nondestructive Evaluation. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0979-6_31

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  • DOI: https://doi.org/10.1007/978-1-4613-0979-6_31

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4612-8275-4

  • Online ISBN: 978-1-4613-0979-6

  • eBook Packages: Springer Book Archive

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