Abstract
Group IV elements in the ultrapure form are used in the manufacture of semiconductor devices and other components used in the electronics industry. The most common materials are made from crystalline or amorphous elemental silicon. In addition to these elements, it is also possible to prepare semiconductors from materials isoelectronic with the group IV elements, specifically, intermetallic compounds from group III-group V elements and from group II-group VI elements. This discussion will focus on the intermetallic compounds from group III (A1, Ga, In)-group V (P, As, Sb) elements and will describe results from studies on gallium arsenide (GaAs). It should be recognized that there are a large number of intermetal1ic compounds that have been made and could be used in electronic devices. These compounds not only include binary compounds, but also could include ternary and higher compounds of these elements╌e. g., AlGaAs.
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© 1988 Plenum Press, New York
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Carter, D.E., Bellamy, W.T. (1988). Toxicology of the Group III–V Intermetallic Semiconductor, Gallium Arsenide. In: Clarkson, T.W., Friberg, L., Nordberg, G.F., Sager, P.R. (eds) Biological Monitoring of Toxic Metals. Rochester Series on Environmental Toxicity. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0961-1_21
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DOI: https://doi.org/10.1007/978-1-4613-0961-1_21
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