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Condensed Matter Theories pp 259–264Cite as

Degenerately-Doped Semiconductors in Strong Magnetic Fields

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Abstract

The properties of a disordered, strongly interacting electron system, in a strong external magnetic field, are not very well understood at the present time. Thus there is strong incentive to carry out experiments on a variety of materials, to explore the behavior under different conditions.

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References

  1. T.F. Rosenbaum, S.B. Field, D.A. Nelson, and P.B. Littlewood, Phys. Rev. Lett. 54:241 (1985).

    Article  CAS  Google Scholar 

  2. S.B. Field, D.H. Reich, B.S. Shivaran, T.F. Rosenbaum, DA Nelson, and P.B. Littlewood, Phys. Rev. B33:5082 (1986).

    Google Scholar 

  3. G. Nimtz, B. Schlicht, E. Tyssen, R. Dornhaus, and L.D. Hass, Solid State Commun. 32:669 (1979).

    Article  CAS  Google Scholar 

  4. M. Shayegan, V.J. Goldman, H.D. Drew, D.A. Nelson, and P.M. Tredrow, Phys. Rev. B32:6952 (1986).

    Google Scholar 

  5. V. Goldman, H.D. Drew, M. Shayegan, and D.A. Nelson, Phys. Rev. Lett. 56:968 (1986).

    Article  CAS  Google Scholar 

  6. G. DeVos, F. Herlach, in: “Application of High Magnetic Fields in Semiconductor Physics,” G. Landwehr, ed., Springer-Verlag, Berlin (1983).

    Google Scholar 

  7. J.P. Stadler, G. Nimtz, B. Schlicht, and G. Remenyi, Solid State Commun. 52:67 (1984).

    Article  CAS  Google Scholar 

  8. M.J. Burns, P.F. Hopkins, B.I. Halperin, G.A. Thomas, and R.M. Westervelt, to be published. Preliminary data presented at this workshop showed a large anisotropy in the electrical resistivity. Upon further investigation, however, it appears that the anisotropy was a result of strong planar striations in the dopant concentration in the germanium crystal from which the samples were cut.

    Google Scholar 

  9. V. Celli and N.D. Mermin, Phys. Rev. 140:A839 (1965).

    Article  Google Scholar 

  10. A standard estimate for the impurity density n c at the metal-insulator transition is (Ref. 16) ncr<Stack><Subscript>⊥</Subscript><Superscript>2</Superscript></Stack>r ∥ = l/64, where r ⊥ and r ∥ are the “radii” of an isolated impurity perpendicular and parallel to the symmetry axis. Using a trial wavefunction as in Yafet et al. (Ref. 13), we estimate that the field necessary for freezeout in the fully stressed case is H ≅ 25 Tesla.

    Google Scholar 

  11. G. Feher, D.K. Wilson, and E.A. Gere, Phys. Rev. Lett. 3:25 (1959).

    Article  CAS  Google Scholar 

  12. See for example, K. Seeger, “Semiconductor Physics,” 2nd ed., Springer-Verlag, Berlin (1982).

    Google Scholar 

  13. Y. Yafet, R.W. Keyes, and E.N. Adams, J. Phys. Chem. Solids 1:137 (1956).

    Article  Google Scholar 

  14. R.W. Keyes and R.J. Sladek, J. Phys. Chem. Solids 1:143 (1956).

    Article  Google Scholar 

  15. Yu. G. Arapov, A.B. Davydov, M.L. Zvereva, V.I. Stafeev, and I.M. Tsidil’kovskii, Fiz. Tekh. Poluprovedn. 17:1392 (1983); [Sov. Phys. Semicond. 17:885 (1983)].

    CAS  Google Scholar 

  16. N.F. Mott and E.A. Davis, “Electronic Processes in Non-crystalline Materials,” Clarendon Press, Oxford (1979);

    Google Scholar 

  17. B.I. Shklovskii and A.L. Efros, “Electronic Properties of Doped Semiconductors,” Springer-Verlag, Berlin (1984).

    Google Scholar 

  18. H. Fukuyama, Solid State Commun. 26:783 (1978).

    Article  CAS  Google Scholar 

  19. W.G. Kleppmann and R.J. Elliot, J. Phys. C8:2729 (1975).

    Google Scholar 

  20. D. Yoshioka and H. Fukuyama, J. Phys. Soc. Jpn. 50:725 (1981).

    Article  CAS  Google Scholar 

  21. See also: H. Schulz and M. Youssoff, Z. Physik 267:41 (1974);

    Article  CAS  Google Scholar 

  22. R. Gerhardts and P. Schlottmann, Z. Physik B34:349 (1979);

    Google Scholar 

  23. P. Schlottmann, Z. Physik B34:363 (1979); and references therein.

    Google Scholar 

  24. Data on small bandgap semiconductors such as Hg1−x Cd x Te have been given several alternate explanations. See Refs. 1–7; also M. Ya. Azbel’, Solid State Commun. 54:127 (1985);

    Article  Google Scholar 

  25. M. Ya. Azbel’ and O. Entin-Wolhman. Phys. Rev. B32:562 (1985).

    Google Scholar 

  26. See M. Ya. Azbel’, Phys. Rev. B26:3430 (1982);

    Google Scholar 

  27. H.L. Störmer, J.P. Eisenstein, A.C. Gossard, W. Wiegmann and K. Baldwin, Phys. Rev. Lett. 56:85 (1986).

    Article  Google Scholar 

  28. Further details will be given elsewhere.

    Google Scholar 

  29. Y. Iye, P.M. Tedrow, G. Timp, M. Shayegan, M.S. Dresselhaus, A. Furukawa, and S. Tanuma, Phys. Rev. B25:5478 (1982);

    Google Scholar 

  30. G. Timp, M.D. Dresselhaus, T.C. Chieu, G. Dresselhaus, and Y. Iye, Phys. Rev. B28:7393 (1983).

    Google Scholar 

  31. B.I. Halperin, Phys. Rev. B25: 2185 (1982).

    Google Scholar 

  32. B.I. Halperin and P.C. Hohenberg, Phys. Rev. 177:952 (1969).

    Article  CAS  Google Scholar 

  33. Cf., Y. Imry and S.-K. Ma, Phys. Rev. Lett. 35:1399 (1975).

    Article  CAS  Google Scholar 

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Author information

Authors and Affiliations

  1. Department of Physics, Harvard University, Cambridge, MA, 02138, USA

    B. I. Halperin

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  1. B. I. Halperin
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Editor information

Editors and Affiliations

  1. Argonne National Laboratory, Argonne, Illinois, USA

    P. Vashishta  & Rajiv K. Kalia  & 

  2. University of Manchester Institute of Science and Technology, Manchester, UK

    R. F. Bishop

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© 1987 Plenum Press, New York

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Halperin, B.I. (1987). Degenerately-Doped Semiconductors in Strong Magnetic Fields. In: Vashishta, P., Kalia, R.K., Bishop, R.F. (eds) Condensed Matter Theories. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0917-8_28

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  • DOI: https://doi.org/10.1007/978-1-4613-0917-8_28

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4612-8244-0

  • Online ISBN: 978-1-4613-0917-8

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