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Effects of Electron Bombardment on CdSe Crystals At T ≅ 4K

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Abstract

Prior to the electron bombardment of the CdSe crystals, three cathodoluminescence bands are observed at 732, 920 and 1260 nm. The first was attributed to a transition between an unknown donor and an acceptor formed by a VCd′ and another donor [1,2], and the second to capture of free electrons by “k” centers [3]. The third is probably due to Cu emission [4]. Under electron irradiation above a threshold energy of 330 keV, a new band at 1120 nm is produced and attributed to an electron transition from VCd′ to the valence band [5,6]. The threshold energy of 330 keV is assigned to the displacement of Cd atoms with a displacement energy of 8.48 eV.

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References

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© 1987 Springer-Verlag Berlin Heidelberg

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Pazionis, G.D., Schultz, H.J. (1987). Effects of Electron Bombardment on CdSe Crystals At T ≅ 4K. In: Di Bartolo, B. (eds) Spectroscopy of Solid-State Laser-Type Materials. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0899-7_42

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  • DOI: https://doi.org/10.1007/978-1-4613-0899-7_42

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4612-8235-8

  • Online ISBN: 978-1-4613-0899-7

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