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Radiation Exposure

  • Chapter
Semiconductor Lithography

Part of the book series: Microdevices ((MDPF))

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Abstract

The traditional form of exposure of resists involves pure uncharged ultraviolet photons. From actual microscopy and diffraction theory, the resolution is limited by the practical wavelength of observation. Thus, shorter-wavelength, higher-energy photoelectrons from electron beams, ion beams, and X rays have been used in microscopes to observe and analyze objects the size of atoms. These analytical tools formed the basis of high-energy radiation exposure systems to expose resists and build devices to a nanometer scale. In some cases, masks disappear and resolution with some forms of high energy becomes infinite, if one is willing to pay for the high capital and maintenance costs at low wafer exposure throughput. The primary application of these forms of exposure tools has been to fabricate, measure, and repair photomasks but gradually scanning exposure tools have been applied to direct silicon write and in the next decade, flood exposure will also enter into the production of memory circuits.

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    Wayne M. Moreau

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Moreau, W.M. (1988). Radiation Exposure. In: Semiconductor Lithography. Microdevices. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0885-0_9

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