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Positive Radiation Resists

  • Chapter
Semiconductor Lithography

Part of the book series: Microdevices ((MDPF))

Abstract

Positive radiation resists are required for submicrometer lithography using high-energy (10–200 keV) X-ray, ion, and electron beams. Since the resolution of an exposure process is limited by the wavelength of forward and, moreover, backscat-tered radiation, high-energy rays of atom-size wavelengths are capable of resolution to 50 Å (Fig. 3-1-1). However, the practical resolution limit is about 500 Å. If the backscatter is reduced or eliminated using silicon membranes instead of thick wafers, nanometer-size devices can be fabricated.

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    Wayne M. Moreau

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Moreau, W.M. (1988). Positive Radiation Resists. In: Semiconductor Lithography. Microdevices. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0885-0_3

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