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Positive Radiation Resists

  • Wayne M. Moreau
Chapter
Part of the Microdevices book series (MDPF)

Abstract

Positive radiation resists are required for submicrometer lithography using high-energy (10–200 keV) X-ray, ion, and electron beams. Since the resolution of an exposure process is limited by the wavelength of forward and, moreover, backscat-tered radiation, high-energy rays of atom-size wavelengths are capable of resolution to 50 Å (Fig. 3-1-1). However, the practical resolution limit is about 500 Å. If the backscatter is reduced or eliminated using silicon membranes instead of thick wafers, nanometer-size devices can be fabricated.

Keywords

Modulation Transfer Function Ethyl Acrylate Japanese Patent Methyl Isobutyl Ketone Onium Salt 
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© Plenum Press, New York 1988

Authors and Affiliations

  • Wayne M. Moreau
    • 1
  1. 1.General Technology DivisionInternational Business Machines CorporationNew YorkUSA

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