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Semiconductor Lithography pp 857–895Cite as

Nonresist Processes

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Part of the book series: Microdevices ((MDPF))

Abstract

Since organic-based resists and etching processes were introduced into semiconductor lithography, there has always been a motivation to replace them with “resistless” processes that directly form circuit components. The direct deposition of metal lines and the direct doping of silicon eliminates all of the resist process steps, some process equipment and the associated organic chemical operations. If we expend 100 mJ/cm2 to expose an organic resist, can the same energy be used to decompose metal or silicon precursors into useful circuit patterns? For specialized applications, we would like to deposit conformal coatings at different thicknesses on the same layer and we desire the capability of repairing defects in a circuit or photomask such as a metal short or a missing image. Another cost motivation would be the elimination of wet chemical processes and the ensuing waste disposal. The successful elimination of wet development can be analogous to the success of the instant developing “Polaroid” process (over aqueous processing in photographic chemistry).

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  1. General Technology Division, International Business Machines Corporation, Hopewell Junction, New York, USA

    Wayne M. Moreau

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© 1988 Plenum Press, New York

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Moreau, W.M. (1988). Nonresist Processes. In: Semiconductor Lithography. Microdevices. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0885-0_16

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  • DOI: https://doi.org/10.1007/978-1-4613-0885-0_16

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4612-8228-0

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