Abstract
Nitrogen trifluoride has been used for over a decade as a fluorine donor in rare gas-fluoride excimer lasers, and more recently has found increasing use in plasma etching discharges for the fabrication and semiconductor materials. Modeling of the NF3discharges in these applications requires a knowledge of the electron scattering and electron gain and loss processes for NF3. Several electron attachment studies using electron beam and electron swarm techniques have been performed in NF3, but the uncertainty in the rate of electron attachment from these studies is large.
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© 1990 Plenum Press, New York
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Hunter, S.R. (1990). Electron Attachment to NF3 . In: Gallagher, J.W., Hudson, D.F., Kunhardt, E.E., Van Brunt, R.J. (eds) Nonequilibrium Effects in Ion and Electron Transport. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0661-0_41
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DOI: https://doi.org/10.1007/978-1-4613-0661-0_41
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