Abstract
BC13is a gas of great importance for plasma technologies in micro-electronics fabrication, especially for etching of aluminum. In this paper we present some evidence for the three body attachment leading to formation of BC1\(_3^ -\)ions at low electron energies and for dissociative attachment at higher mean electron energies. In the measurements of electron attachment rate coefficients performed in dilute BC13mixtures in nitrogen and argon, we have observed an increase of electron attachment towards the lowest E/N (energies) values. This is consistent with the observations of attachment (Stockdale et al., 1972) at thermal energies and of low photodetachment thresholds in some RF discharges (Gottscho and Gaebe, 1986).
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References
Gottscho, R. A., C. E. Gaebe, 1986, IEEE Trans. Plasma Sci. PS-14, 92.
Lee, L. C., J. C. Han, M. Suto, 1989, Sixth International Swarm Seminar, Glen Cove, N. Y.
Stockdale, J. A., D. R. Nelson, F. J. Davis, R. N. Compton, 1972, J. Chem. Phys. 56, 3336.
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© 1990 Plenum Press, New York
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Petrovic, Z.L., Wang, W.C., Lee, L.C., Han, J.C., Suto, M. (1990). Negative Ion Kinetics in BC13Discharges. In: Gallagher, J.W., Hudson, D.F., Kunhardt, E.E., Van Brunt, R.J. (eds) Nonequilibrium Effects in Ion and Electron Transport. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0661-0_39
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DOI: https://doi.org/10.1007/978-1-4613-0661-0_39
Publisher Name: Springer, Boston, MA
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