Abstract
Grazing incidence x-ray diffraction has been utilized to give a direct measure of the lateral strain distribution during in-situ MBE deposition of Ge onto Si(001). Differences in growth conditions and thermal treatment result in significantly different strain relaxation behavior. The results demonstrate the gradual relaxation of strain, which is incomplete at a coverage of 11 monolayers. At this coverage the strain distribution exhibits two components, one of which is almost fully relaxed and the other having a range of lattice spacings intermediate between those for bulk Si and Ge. The results are discussed in terms of current models for strain relaxation.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
E. P. O’Reilly, Semicond. Sci. Technol. 4, 121 (1989).
J. H. van der Merwe, J. Appl. Phys. 34, 123 (1962).
J. W. Matthews and A. E. Blakeslee, J. Vac. Sci. Technol. 12, 126 (1975).
R. People and J. C. Bean, Appl. Phys. Lett. 47, 322 (1985) and Appl. Phys. Lett. 49, 229 (1986).
P. M. J. Marée, J. C. Barbour, J. F. van der Veen, K. L. Kavanagh, C. W. T. Bulle-Lieuwma and M. P. A. Wiegers, J. Appl. Phys. 62, 4413 (1987).
J. C. Bean, L. C. Feldman, A. T. Fiory, S. Nakahara and I. K. Robinson, J. Vac. Sci. Technol. A2, 436 (1984).
R. H. Miles, T. C. Gill, P. P. Chow, D. C. Johnson, R. J. Hauenstein, C. W. Nieh and M. D. Strathman, Appl. Phys. Lett. 52, 916 (1988).
D. J. Lockwood, J.-M. Baribeau and P. Y. Timbrell, J. Appl. Phys. 65, 3049 (1989).
J. Y. Tsao, B. W. Dodson, S. T. Picraux and D. M. Cornelison, Phys. Rev. Lett. 59, 2455 (1987).
I. J. Fritz, Appl. Phys. Lett. 51, 1080 (1987).
Y. Kohama, Y. Fukada and M. Seki, Appl. Phys. Lett. 52, 380 (1988).
C. G. Tuppen, C. J. Gibbings and M. Hockly, J. Cryst. Growth 94, 392 (1989).
J. Bevk, J. P. Mannaerts, L. C. Feldman, B. A. Davidson and A. Ourmazd, Appl. Phys. Lett. 49, 286 (1986).
S. S. Iyer, P. R. Pukite, J. C. Tsang and M. W. Copel, J. Cryst. Growth 95, 439 (1989).
K. Sakamoto, T. Sakamoto, S. Nagao, G. Hashiguchi, K. Kuniyoshi and Y. Bando, Jap. J. Appl. Phys. 26, 666 (1987).
H.-J. Gossmann and G. J. Fisanick, J. Vac. Sci. Technol. A6, 2037 (1988).
M. Zinke-Allmang, L. C. Feldman, S. Nakara and B. A. Davidson, Phys. Rev. B39, 7848 (1989).
I. K. Robinson, Phys. Rev. B33, 3830 (1986).
A. A. Williams, J. E. Mácdonald, R. G. van Silfhout, J. F. van der Veen, A. D. Johnson and C. Norris, J. Phys.: Condens. Matter 1, SB273 (1989).
S. S. Iyer, J. C. Tsang, M. W. Copel, P. R. Pukite and R. M. Tromp, Appl. Phys. Lett. 54, 219 (1989).
E. Vlieg, A. van’t Ent, A. P. de Jong, H. Neerings and J. F. van der Veen, Nucl. Instr. Methods A262, 522 (1987).
E. Vlieg, J. F. van der Veen, J. E. Macdonald and M. Miller, J. Appl. Cryst. 20, 330 (1987).
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1990 Plenum Press, New York
About this chapter
Cite this chapter
Macdonald, J.E. et al. (1990). Strain Relaxation in Ge/Si(001) Studied Using X-Ray Diffraction. In: Lagally, M.G. (eds) Kinetics of Ordering and Growth at Surfaces. NATO ASI Series, vol 239. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-0653-5_30
Download citation
DOI: https://doi.org/10.1007/978-1-4613-0653-5_30
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4612-7911-2
Online ISBN: 978-1-4613-0653-5
eBook Packages: Springer Book Archive